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MT250QL02GABB1E120SATES 参数 Datasheet PDF下载

MT250QL02GABB1E120SATES图片预览
型号: MT250QL02GABB1E120SATES
PDF下载: 下载PDF文件 查看货源
内容描述: [3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase]
分类和应用:
文件页数/大小: 97 页 / 1038 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 3V Multiple I/O Serial Flash Memory  
Internal Configuration Register  
Internal Configuration Register  
The memory configuration is set by an internal configuration register that is not directly  
accessible to users.  
The user can change the default configuration at power up by using the WRITE NON-  
VOLATILE CONFIGURATION REGISTER. Information from the nonvolatile configura-  
tion register overwrites the internal configuration register during power-on or after a re-  
set.  
The user can change the configuration during operation by using the WRITE VOLATILE  
CONFIGURATION REGISTER or the WRITE ENHANCED VOLATILE CONFIGURATION  
REGISTER commands. Information from the volatile configuration registers overwrite  
the internal configuration register immediately after the WRITE command completes.  
Figure 14: Internal Configuration Register  
Nonvolatile configuration register  
Volatile configuration register and  
enhanced volatile configuration register  
Register download is executed only during  
the power-on phase or after a reset,  
overwriting configuration register settings  
on the internal configuration register.  
Register download is executed after a  
WRITE VOLATILE OR ENHANCED VOLATILE  
CONFIGURATION REGISTER command,  
overwriting configuration register  
Internal configuration  
register  
settings on the internal configuration register.  
Device behavior  
CCMTD-1725822587-3368  
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2014 Micron Technology, Inc. All rights reserved.  
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