256Mb, 3V Multiple I/O Serial Flash Memory
READ SERIAL FLASH DISCOVERY PARAMETER Operation
READ SERIAL FLASH DISCOVERY PARAMETER Operation
READ SERIAL FLASH DISCOVERY PARAMETER Command
To execute READ SERIAL FLASH DISCOVERY PARAMETER command, S# is driven
LOW. The command code is input on DQ0, followed by three address bytes and eight
dummy clock cycles (address is always 3 bytes, even if the device is configured to work
in 4-byte address mode). The device outputs the information starting from the specified
address. When the 2048-byte boundary is reached, the data output wraps to address 0 of
the serial Flash discovery parameter table. The operation is terminated by driving S#
HIGH at any time during data output.
Note: The operation always executes in continuous mode so the read burst wrap setting
in the volatile configuration register does not apply.
Figure 18: READ SERIAL FLASH DISCOVERY PARAMETER Command – 5Ah
Extended
0
7
8
Cx
C
LSB
A[MIN]
DQ0
DQ1
Command
MSB
A[MAX]
LSB
DOUT DOUT
DOUT
MSB
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
High-Z
Dummy cycles
Dual
0
3
4
Cx
C
LSB
A[MIN]
LSB
DOUT DOUT
DOUT
MSB
DOUT
DOUT
DQ[1:0]
Command
MSB
A[MAX]
Dummy cycles
Quad
0
1
2
Cx
C
LSB
A[MIN]
LSB
DOUT
DOUT
MSB
DOUT
DQ[3:0]
Command
MSB
A[MAX]
Don’t Care
Dummy cycles
1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2;
For quad protocol, Cx = 1 + (A[MAX] + 1)/4.
Notes:
2. S# not shown.
CCMTD-1725822587-3368
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
47
© 2014 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
