256MB / 512MB (x64)
168-PIN SDRAM DIMMs
Ta b le 22: Se ria l Pre se n ce -De t e ct Ma t rix (Co n t in u e d )
VDD = +3.3V ±0.3V; “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
ENTRY
(VERSION)
BYTE
DESCRIPTION
MT8LSDT3264A(I) MT16LSDT6464A(I)
31
32
256MB
40
40
MODULE BANK DENSITY
COMMAND AND ADDRESS SETUP TIME, tAS, tCMS
1.5ns (-13E/-133)
2ns (-10E)
15
20
15
20
t
COMMAND AND ADDRESS HOLD TIME, tAH, CMH
33
34
35
0.8ns (-13E/-133)
1ns (-10E)
08
10
08
10
DATA SIGNAL INPUT SETUP TIME, tDS
DATA SIGNAL INPUT HOLD TIME, tDH
1.5ns (-13E/-133)
2ns (-10E)
15
20
15
20
0.8ns (-13E/-133)
1ns (-10E)
08
10
08
10
36-61
62
00
12
00
12
RESERVED
REV. 1.2
SPD REVISION
63
(-13E)
(-133)
(-10E)
8B
D1
19
8C
D2
1A
CHECKSUM FOR BYTES 0-62
64
65-71
72
MICRON
2C
FF
2C
FF
MANUFACTURER’S JEDEC ID CODE
MANUFACTURER’S JEDEC ID CODE(CONT.)
MANUFACTURING LOCATION
MODULE PART NUMBER (ASCII)
PCB IDENTIFICATION CODE
01 - 06
01 - 06
73-90
91
Variable Data
01-04
Variable Data
01-04
92
0
00
00
IDENTIFICATION CODE (CONT.)
YEAR OF MANUFACTURE IN BCD
WEEK OF MANUFACTURE IN BCD
MODULE SERIAL NUMBER
93
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
94
95-98
99-125
126
MANUFACTURER-SPECIFIC DATA (RSVD)
SYSTEM FREQUENCY
100 MHz (-13E/
-133/-10E)
64
64
FF
127
AF
SDRAM COMPONENT & CLOCK DETAIL
NOTE:
t
t
1. The value of RAS used for -13E modules is calculated from RC - tRP. Actual device spec. value is 37ns.
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.
22
MICRON [ MICRON TECHNOLOGY ]
