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MT16LSDT6464AI 参数 Datasheet PDF下载

MT16LSDT6464AI图片预览
型号: MT16LSDT6464AI
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块 [SYNCHRONOUS DRAM MODULE]
分类和应用: 动态存储器
文件页数/大小: 24 页 / 609 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256MB / 512MB (x64)  
168-PIN SDRAM DIMMs  
Ta b le 22: Se ria l Pre se n ce -De t e ct Ma t rix  
VDD = +3.3V ±0.3V; 1”/“0”: Serial Data, “driven to HIGH/driven to LOW”  
ENTRY  
(VERSION)  
BYTE  
DESCRIPTION  
MT8LSDT3264A(I) MT16LSDT6464A(I)  
0
1
2
3
4
5
6
7
8
9
128  
256  
80  
08  
04  
0D  
0A  
01  
40  
00  
01  
80  
08  
04  
0D  
0A  
02  
40  
00  
01  
NUMBER OF BYTES USED BY MICRON  
TOTAL NUMBER OF SPD MEMORY BYTES  
MEMORY TYPE  
SDRAM  
13  
NUMBER OF ROWADDRESSES  
NUMBER OF COLUMN ADDRESSES  
NUMBER OF MODULE BANKS  
MODULE DATA WIDTH  
10  
1 or 2  
64  
0
MODULE DATA WIDTH (continued)  
MODULE VOLTAGE INTERFACE LEVELS  
SDRAM CYCLE TIME, tCK  
(CAS LATENCY = 3)  
LVTTL  
7ns (-13E)  
7.5ns (-133)  
8ns (-10E)  
70  
75  
80  
70  
75  
80  
SDRAM ACCESS FROM CLK, tAC  
(CAS LATENCY = 3)  
10  
5.4ns (-13E/-133)  
6ns (-10E)  
54  
60  
54  
60  
11  
12  
13  
14  
15  
NONPARITY  
00  
82  
08  
00  
01  
00  
82  
08  
00  
01  
MODULE CONFIGURATION TYPE  
REFRESH RATE/TYPE  
7.8125µs/SELF  
8
NONE  
1
SDRAM WIDTH (PRIMARY SDRAM)  
ERROR-CHECKING SDRAM DATA WIDTH  
MINIMUM CLOCK DELAY FROM BACK-TO-BACK  
RANDOM COLUMN ADDRESSES,tCCD  
BURST LENGTHS SUPPORTED  
NUMBER OF BANKS ONS DRAM DEVICE  
CAS LATENCIES SUPPORTED  
16  
17  
18  
19  
20  
21  
22  
23  
1, 2, 4, 8, PAGE  
8F  
04  
06  
01  
01  
00  
0E  
8F  
04  
06  
01  
01  
00  
0E  
4
2, 3  
0
CS LATENCY  
0
UNBUFFERED  
0E  
WE LATENCY  
SDRAM MODULE ATTRIBUTES  
SDRAM DEVICE ATTRIBUTES:GENERAL  
SDRAM CYCLE TIME , tCK  
7.5ns (13E)  
10ns (-133/-10E)  
75  
A0  
75  
A0  
(CAS LATENCY = 2) 10 (-133/-10E) A0  
SDRAMACCESSFROMCLK, tAC  
(CAS LATENCY = 2)  
SDRAM CYCLE TIME, tCK  
(CAS LATENCY = 1)  
SDRAM ACCESS FROM CLK, tAC  
(CAS LATENCY = 1)  
24  
25  
26  
5.4ns (-13E)  
6ns (-133/-10E)  
54  
60  
54  
60  
00  
00  
00  
00  
MINIMUM ROW PRECHARGE TIME, tRP  
27  
28  
15ns (-13E)  
20ns (-133/-10E)  
0F  
14  
0F  
14  
MINIMUM ROW ACTIVE TO ROW ACTIVE, tRRD  
14ns (-13E)  
15ns (-133)  
20ns (-10E)  
0E  
0F  
14  
0E  
0F  
14  
MINIMUM RAS# TO CAS# DELAY, tRCD  
29  
30  
15ns (-13E)  
20ns (-133/-10E)  
0F  
14  
0F  
14  
MINIMUM RAS# PULSE WIDTH, tRAS (See note 1)  
45ns (-13E)  
44ns (133)  
50ns (-10E)  
2D  
2C  
32  
2D  
2C  
32  
32,64 Meg x 64 SDRAM DIMMs  
SD8_16C32_64x64AG_C.fm - Rev. C 11/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2002, Micron Technology Inc.  
21  
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