欢迎访问ic37.com |
会员登录 免费注册
发布采购

MT16KTF1G64AZ 参数 Datasheet PDF下载

MT16KTF1G64AZ图片预览
型号: MT16KTF1G64AZ
PDF下载: 下载PDF文件 查看货源
内容描述: [1.35V DDR3L SDRAM SODIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 21 页 / 439 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT16KTF1G64AZ的Datasheet PDF文件第9页浏览型号MT16KTF1G64AZ的Datasheet PDF文件第10页浏览型号MT16KTF1G64AZ的Datasheet PDF文件第11页浏览型号MT16KTF1G64AZ的Datasheet PDF文件第12页浏览型号MT16KTF1G64AZ的Datasheet PDF文件第14页浏览型号MT16KTF1G64AZ的Datasheet PDF文件第15页浏览型号MT16KTF1G64AZ的Datasheet PDF文件第16页浏览型号MT16KTF1G64AZ的Datasheet PDF文件第17页  
4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM  
Electrical Specifications  
Electrical Specifications  
Stresses greater than those listed may cause permanent damage to the module. This is a  
stress rating only, and functional operation of the module at these or any other condi-  
tions outside those indicated in each device's data sheet is not implied. Exposure to ab-  
solute maximum rating conditions for extended periods may adversely affect reliability.  
Table 11: Absolute Maximum Ratings  
Symbol  
VDD  
Parameter  
Min  
–0.4  
–0.4  
Max  
1.975  
1.975  
Units  
VDD supply voltage relative to VSS  
Voltage on any pin relative to VSS  
V
V
VIN, VOUT  
Table 12: Operating Conditions  
Symbol Parameter  
Min  
1.283  
1.425  
–600  
Nom  
1.35  
1.5  
Max  
Units Notes  
VDD  
VDD supply voltage  
1.45  
1.575  
600  
V
V
mA  
V
1
2
IVTT  
VTT  
Termination reference current from VTT  
Termination reference voltage (DC) – com-  
mand/address bus  
0.49 × VDD - 20mV 0.5 × VDD 0.51 × VDD + 20mV  
II  
Input leakage current;  
Any input 0V VIN VDD  
VREF input 0V VIN 0.95V WE#, BA  
(All other pins not under  
Address inputs,  
RAS#, CAS#,  
–32  
–16  
0
0
32  
16  
µA  
;
S#, CKE, ODT,  
CK, CK#  
test = 0V)  
DM  
–4  
0
0
4
IOZ  
Output leakage current;  
DQ, DQS, DQS#  
–10  
10  
µA  
µA  
0V VOUT VDD  
;
DQ and ODT are  
disabled; ODT is HIGH  
IVREF  
VREF supply leakage current;  
–16  
0
16  
VREFDQ = VDD/2 or VREFCA = VDD/2  
(All other pins not under test = 0V)  
TA  
TC  
Module ambient  
operating temperature  
Commercial  
0
0
70  
95  
°C  
°C  
3, 4  
DDR3 SDRAM component  
case operating temperature  
Commercial  
3, 4, 5  
1. Module is backward-compatible with 1.5V operation. Refer to device specification for  
details and operation guidance.  
Notes:  
2. VTT termination voltage in excess of the stated limit will adversely affect the command  
and address signals’ voltage margin and will reduce timing margins.  
3. TA and TC are simultaneous requirements.  
4. For further information, refer to technical note TN-00-08: “Thermal Applications,”  
available on Micron’s web site.  
5. The refresh rate is required to double when 85°C < TC 95°C.  
PDF: 09005aef846206a0  
ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
13  
© 2011 Micron Technology, Inc. All rights reserved.  
 复制成功!