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MT16KTF1G64AZ 参数 Datasheet PDF下载

MT16KTF1G64AZ图片预览
型号: MT16KTF1G64AZ
PDF下载: 下载PDF文件 查看货源
内容描述: [1.35V DDR3L SDRAM SODIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 21 页 / 439 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM  
DRAM Operating Conditions  
DRAM Operating Conditions  
Recommended AC operating conditions are given in the DDR3 component data sheets.  
Component specifications are available at micron.com. Module speed grades correlate  
with component speed grades, as shown below.  
Table 13: Module and Component Speed Grades  
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades  
Module Speed Grade  
Component Speed Grade  
-2G1  
-1G9  
-1G6  
-1G4  
-1G1  
-1G0  
-80C  
-80B  
-093  
-107  
-125  
-15E  
-187E  
-187  
-25E  
-25  
Design Considerations  
Simulations  
Micron memory modules are designed to optimize signal integrity through carefully de-  
signed terminations, controlled board impedances, routing topologies, trace length  
matching, and decoupling. However, good signal integrity starts at the system level.  
Micron encourages designers to simulate the signal characteristics of the system's  
memory bus to ensure adequate signal integrity of the entire memory system.  
Power  
Operating voltages are specified at the DRAM, not at the edge connector of the module.  
Designers must account for any system voltage drops at anticipated power levels to en-  
sure the required supply voltage is maintained.  
PDF: 09005aef846206a0  
ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
14  
© 2011 Micron Technology, Inc. All rights reserved.  
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