4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM
IDD Specifications
Table 15: DDR3 IDD Specifications and Conditions – 8GB (Die Revisions E)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 4Gb (512 Meg x
8) component data sheet
Parameter
Symbol
1866
640
1600
584
1333
520
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
IDD0
1
IDD1
704
672
640
2
IDD2P0
288
288
288
2
IDD2P1
592
512
448
2
IDD2Q
560
512
448
2
IDD2N
560
512
464
1
Precharge standby ODT current
IDD2NT
480
456
424
2
Active power-down current
IDD3P
656
608
560
2
Active standby current
IDD3N
656
608
560
1
Burst read operating current
IDD4R
1536
1272
2080
320
1400
1144
2024
320
1264
1024
1968
320
1
Burst write operating current
IDD4W
1
Refresh current
IDD5B
2
Self refresh temperature current: MAX TC = 85°C
Self refresh temperature current (SRT-enabled): MAX TC = 95°C
All banks interleaved read current
Reset current
IDD6
2
IDD6ET
400
400
400
1
IDD7
2152
320
1904
320
1664
320
2
IDD8
1. One module rank in the active IDD; the other rank in IDD2P0 (slow exit).
2. All ranks in this IDD condition.
Notes:
PDF: 09005aef846206a0
ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
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