OBSOLETE
4, 8 MEG x 36
PARITY DRAM SIMMs
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (VCC = +5V ±10%)
AC CHARACTERISTICS
-6
PARAMETER
SYMBOL
MIN
0
MAX
UNITS
ns
NOTES
t
Read command hold time (referenced to RAS#)
RAS# hold time
RRH
16
t
RSH
15
15
2
ns
t
Write command to RAS# lead time
Transition time (rise or fall)
Write command hold time
RWL
ns
t
T
50
ns
t
WCH
10
45
0
ns
t
Write command hold time (referenced to RAS#)
WE# command setup time
WCR
ns
t
WCS
ns
t
Write command pulse width
WE# hold time (CBR REFRESH)
WE# setup time (CBR REFRESH)
WP
10
10
10
ns
t
WRH
ns
t
WRP
ns
4, 8 Meg x 36 Parity DRAM SIMMs
DM45.pm5 – Rev. 3/97
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1997, Micron Technology, Inc.
7
MICRON [ MICRON TECHNOLOGY ]
