OBSOLETE
4, 8 MEG x 36
PARITY DRAM SIMMs
CAPACITANCE
MAX
PARAMETER
SYMBOL 16MB 32MB UNITS NOTES
Input Capacitance: A0-A10
CI1
CI2
70
94
50
25
10
16
140
188
50
pF
pF
pF
pF
pF
pF
2
2
2
2
2
2
Input Capacitance: WE#
Input Capacitance: RAS0#, RAS1#, RAS2#, RAS3#
Input Capacitance: CAS0#, CAS1#, CAS2#, CAS3#
Input/Output Capacitance: DQ1-DQ8, DQ10-DQ17, DQ19-DQ26, DQ28-DQ35
Input/Output Capacitance: DQ9, DQ18, DQ27, DQ36
CI3
CI4
50
CIO1
CIO2
18
28
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (VCC = +5V ±10%)
AC CHARACTERISTICS
-6
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
t
Access time from column address
Column-address hold time (referenced to RAS#)
Column-address setup time
Row-address setup time
AA
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
t
AR
45
0
t
ASC
t
ASR
0
t
Access time from CAS#
CAC
15
t
Column-address hold time
CAS# pulse width
CAH
10
15
15
3
t
CAS
10,000
t
CAS# hold time (CBR REFRESH)
CAS# to output in Low-Z
CHR
4
t
CLZ
21
13
t
CAS# precharge time
CP
10
t
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CPA
35
t
CRP
10
60
10
15
10
0
t
CSH
t
CAS# setup time (CBR REFRESH)
Write command to CAS# lead time
Data-in hold time
CSR
4
t
CWL
t
DH
18
18
t
Data-in setup time
DS
t
Output buffer turn-off delay
FAST-PAGE-MODE READ or WRITE cycle time
Access time from RAS#
OFF
3
15
60
17, 21
t
PC
35
t
RAC
t
RAS# to column-address delay time
Row-address hold time
RAD
15
10
60
60
110
20
0
15
t
RAH
t
RAS# pulse width
RAS
10,000
t
RAS# pulse width (FAST PAGE MODE)
Random READ or WRITE cycle time
RAS# to CAS# delay time
RASP
125,000
t
RC
t
RCD
14
16
t
Read command hold time (referenced to CAS#)
Read command setup time
Refresh period (2,048 cycles)
RAS# precharge time
RCH
t
RCS
0
t
REF
32
t
RP
40
0
t
RAS# to CAS# precharge time
RPC
4, 8 Meg x 36 Parity DRAM SIMMs
DM45.pm5 – Rev. 3/97
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1997, Micron Technology, Inc.
6