欢迎访问ic37.com |
会员登录 免费注册
发布采购

MT12D436M-XX 参数 Datasheet PDF下载

MT12D436M-XX图片预览
型号: MT12D436M-XX
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM模块 [DRAM MODULE]
分类和应用: 动态存储器
文件页数/大小: 17 页 / 311 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT12D436M-XX的Datasheet PDF文件第2页浏览型号MT12D436M-XX的Datasheet PDF文件第3页浏览型号MT12D436M-XX的Datasheet PDF文件第4页浏览型号MT12D436M-XX的Datasheet PDF文件第5页浏览型号MT12D436M-XX的Datasheet PDF文件第7页浏览型号MT12D436M-XX的Datasheet PDF文件第8页浏览型号MT12D436M-XX的Datasheet PDF文件第9页浏览型号MT12D436M-XX的Datasheet PDF文件第10页  
OBSOLETE  
4, 8 MEG x 36  
PARITY DRAM SIMMs  
CAPACITANCE  
MAX  
PARAMETER  
SYMBOL 16MB 32MB UNITS NOTES  
Input Capacitance: A0-A10  
CI1  
CI2  
70  
94  
50  
25  
10  
16  
140  
188  
50  
pF  
pF  
pF  
pF  
pF  
pF  
2
2
2
2
2
2
Input Capacitance: WE#  
Input Capacitance: RAS0#, RAS1#, RAS2#, RAS3#  
Input Capacitance: CAS0#, CAS1#, CAS2#, CAS3#  
Input/Output Capacitance: DQ1-DQ8, DQ10-DQ17, DQ19-DQ26, DQ28-DQ35  
Input/Output Capacitance: DQ9, DQ18, DQ27, DQ36  
CI3  
CI4  
50  
CIO1  
CIO2  
18  
28  
AC ELECTRICAL CHARACTERISTICS  
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (VCC = +5V ±10%)  
AC CHARACTERISTICS  
-6  
PARAMETER  
SYMBOL  
MIN  
MAX  
UNITS  
NOTES  
t
Access time from column address  
Column-address hold time (referenced to RAS#)  
Column-address setup time  
Row-address setup time  
AA  
30  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ms  
ns  
ns  
t
AR  
45  
0
t
ASC  
t
ASR  
0
t
Access time from CAS#  
CAC  
15  
t
Column-address hold time  
CAS# pulse width  
CAH  
10  
15  
15  
3
t
CAS  
10,000  
t
CAS# hold time (CBR REFRESH)  
CAS# to output in Low-Z  
CHR  
4
t
CLZ  
21  
13  
t
CAS# precharge time  
CP  
10  
t
Access time from CAS# precharge  
CAS# to RAS# precharge time  
CAS# hold time  
CPA  
35  
t
CRP  
10  
60  
10  
15  
10  
0
t
CSH  
t
CAS# setup time (CBR REFRESH)  
Write command to CAS# lead time  
Data-in hold time  
CSR  
4
t
CWL  
t
DH  
18  
18  
t
Data-in setup time  
DS  
t
Output buffer turn-off delay  
FAST-PAGE-MODE READ or WRITE cycle time  
Access time from RAS#  
OFF  
3
15  
60  
17, 21  
t
PC  
35  
t
RAC  
t
RAS# to column-address delay time  
Row-address hold time  
RAD  
15  
10  
60  
60  
110  
20  
0
15  
t
RAH  
t
RAS# pulse width  
RAS  
10,000  
t
RAS# pulse width (FAST PAGE MODE)  
Random READ or WRITE cycle time  
RAS# to CAS# delay time  
RASP  
125,000  
t
RC  
t
RCD  
14  
16  
t
Read command hold time (referenced to CAS#)  
Read command setup time  
Refresh period (2,048 cycles)  
RAS# precharge time  
RCH  
t
RCS  
0
t
REF  
32  
t
RP  
40  
0
t
RAS# to CAS# precharge time  
RPC  
4, 8 Meg x 36 Parity DRAM SIMMs  
DM45.pm5 – Rev. 3/97  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
1997, Micron Technology, Inc.  
6
 复制成功!