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M29W256GH70N3E 参数 Datasheet PDF下载

M29W256GH70N3E图片预览
型号: M29W256GH70N3E
PDF下载: 下载PDF文件 查看货源
内容描述: [Parallel NOR Flash Embedded Memory]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 76 页 / 992 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Bus Operations  
Automatic standby enables low power consumption during read mode. When CMOS  
levels (VCC ± 0.3 V) drive the bus, and following a READ operation and a period of inac-  
tivity specified in DC Characteristics, the memory enters automatic standby as internal  
supply current is reduced to ICC2. Data I/O signals still output data if a READ operation  
is in progress. Depending on load circuits connected with data bus, VCCQ can have a  
null consumption when the memory enters automatic standby.  
Output Disable  
Reset  
Data I/Os are High-Z when OE# is HIGH.  
During reset mode, the device is deselected, and outputs are High-Z. The device is in  
reset mode when RST# is LOW. Power consumption is reduced to standby level inde-  
pendently from CE#, OE#, or WE# inputs.  
PDF: 09005aef84bd3b68  
m29w_256mb.pdf - Rev. C 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
13  
© 2013 Micron Technology, Inc. All rights reserved.