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M29W256GH70N3E 参数 Datasheet PDF下载

M29W256GH70N3E图片预览
型号: M29W256GH70N3E
PDF下载: 下载PDF文件 查看货源
内容描述: [Parallel NOR Flash Embedded Memory]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 76 页 / 992 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Memory Organization  
Table 2: Signal Descriptions (Continued)  
Name  
Type  
Description  
VCC  
Supply  
Supply voltage: Provides the power supply for READ, PROGRAM, and ERASE operations.  
The command interface is disabled when VCC VLKO. This prevents WRITE operations from ac-  
cidentally damaging the data during power-up, power-down, and power surges. If the pro-  
gram/erase controller is programming or erasing during this time, then the operation aborts,  
and the contents being altered will be invalid.  
A 0.1μF capacitor should be connected between VCC and VSS to decouple the current surges  
from the power supply. The PCB track widths must be sufficient to carry the currents required  
during PROGRAM and ERASE operations. (See DC Characteristics.)  
VCCQ  
Supply  
I/O supply voltage: Provides the power supply to the I/O pins and enables all outputs to be  
powered independently from VCC  
.
VSS  
Supply  
Ground: All VSS pins must be connected to the system ground.  
Reserved for future use: RFUs should be not connected.  
RFU  
Memory Organization  
Memory Configuration  
The main memory array is divided into 128KB or 64KW uniform blocks.  
Memory Map – 256Mb Density  
Table 3: 256Mb, Blocks[255:0]  
Address Range (x8)  
Address Range (x16)  
Block  
Size  
Block  
Size  
Block  
Start  
End  
Start  
End  
255  
128KB  
1FE 0000h  
1FF FFFFh  
64KW  
0FF 0000h  
0FF FFFFh  
127  
0FE 0000h  
0FF FFFFh  
07F 0000h  
07F FFFFh  
63  
07E 0000h  
07F FFFFh  
03F 0000h  
03F FFFFh  
0
000 0000h  
001 FFFFh  
000 0000h  
000 FFFFh  
PDF: 09005aef84bd3b68  
m29w_256mb.pdf - Rev. C 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
11  
© 2013 Micron Technology, Inc. All rights reserved.