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M29W128GL 参数 Datasheet PDF下载

M29W128GL图片预览
型号: M29W128GL
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 76 页 / 841 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb 3V Embedded Parallel NOR Flash  
Program Operations  
When reprogramming data in a portion of memory already programmed (changing  
programmed data from '0' to '1') operation failure can be detected by a logical OR be-  
tween the previous and the current value.  
UNLOCK BYPASS ENHANCED BUFFERED PROGRAM Command  
The UNLOCK BYPASS ENHANCED BUFFERED PROGRAM command can be used to  
program the memory in fast program mode. The command requires two less address/  
data loading cycles than the standard ENHANCED BUFFERED PROGRAM command.  
Otherwise, the two operations behave identically. The operation cannot be aborted and  
a READ operation to the memory outputs the status register. The ENHANCED BUF-  
FERED PROGRAM CONFIRM command confirms the command and programs the 256  
words loaded in the buffer.  
ENHANCED BUFFERED PROGRAM CONFIRM Command  
The ENHANCED BUFFERED PROGRAM CONFIRM command is used to confirm the  
two ENHANCED BUFFERED PROGRAM CONFIRM commands and to program the 256  
words loaded in the buffer.  
PDF: 09005aef84daa141  
m29w_128mb.pdf - Rev. A 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.