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M29W128GL 参数 Datasheet PDF下载

M29W128GL图片预览
型号: M29W128GL
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 76 页 / 841 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb 3V Embedded Parallel NOR Flash  
Program Operations  
The PROGRAM SUSPEND command may also be issued during a PROGRAM operation  
while an erase is suspended. In this case, data may be read from any address not in  
erase suspend or program suspend mode. To read from the extended memory block  
area (one-time programmable area), the ENTER/EXIT EXTENDED MEMORY BLOCK  
command sequences must be issued.  
The system may also issue the AUTO SELECT command sequence when the device is in  
program suspend mode. The system can read as many auto select codes as required.  
When the device exits auto select mode, the device reverts to program suspend mode  
and is ready for another valid operation.  
The PROGRAM SUSPEND operation is aborted by performing a device reset or power-  
down. In this case, data integrity cannot be ensured, and it is recommended that the  
words or bytes that were aborted be reprogrammed.  
PROGRAM RESUME Command  
The PROGRAM RESUME (30h) command must be issued to exit a program suspend  
mode and resume a PROGRAM operation. The controller can use DQ7 or DQ6 status  
bits to determine the status of the PROGRAM operation. After a PROGRAM RESUME  
command is issued, subsequent PROGRAM RESUME commands are ignored. Another  
PROGRAM SUSPEND command can be issued after the device has resumed program-  
ming.  
ENHANCED BUFFERED PROGRAM Command  
The ENHANCED BUFFERED PROGRAM command (x16 only) makes use of a 256-word  
write buffer to speed up programming. Each write buffer has the same A22-A8 address-  
es. This command dramatically reduces system programming time compared to both  
the standard non-buffered PROGRAM command and the WRITE TO BUFFER com-  
mand.  
When issuing the ENHANCED BUFFERED PROGRAM command, the VPP/WP pin can  
be held HIGH or raised to VPPH (see Program/Erase Characteristics). The following suc-  
cessive steps are required to issue the ENHANCED BUFFERED PROGRAM command:  
The ENHANCED BUFFERED PROGRAM command begins with two unlock cycles, fol-  
lowed by one bus write cycle that sets up the command. The setup code can be ad-  
dressed to any location within the targeted block. Next, another bus write cycle loads  
the first address and data to be programmed. There a total of 256 address and data load-  
ing cycles. To program the content of the write buffer, the ENHANCED BUFFERED  
PROGRAM command must be followed by an ENHANCED BUFFERED PROGRAM  
CONFIRM command. The command ends with an internal enhanced buffered program  
confirm cycle.  
Address/data cycles must be loaded in an increasing address order, from A[7:0] =  
00000000 to A[7:0] = 11111111 until all 256 words are loaded. Invalid address combina-  
tions or the incorrect sequence of bus WRITE cycles will abort the WRITE TO BUFFER  
PROGRAM command.  
The status register bits DQ1, DQ5, DQ6, DQ7 can be used to monitor the device status  
during a WRITE TO BUFFER PROGRAM operation.  
An external 12V supply can be used to improve programming efficiency.  
PDF: 09005aef84daa141  
m29w_128mb.pdf - Rev. A 7/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.