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M29DW256G7ANF6F 参数 Datasheet PDF下载

M29DW256G7ANF6F图片预览
型号: M29DW256G7ANF6F
PDF下载: 下载PDF文件 查看货源
内容描述: [Micron Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 78 页 / 1023 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash  
Registers  
Table 13: Block Protection Status (Continued)  
Nonvolatile  
Nonvolatile  
Volatile  
Block  
Protection Bit Protection Protection Protection  
Lock Bit1  
Bit2  
Bit3  
Status  
Block Protection Status  
1
1
1
00h  
Block unprotected; nonvolatile protection bit changeable.  
1. Nonvolatile protection bit lock bit: when cleared to 1, all nonvolatile protection bits are  
unlocked; when set to 0, all nonvolatile protection bits are locked.  
Notes:  
2. Block nonvolatile protection bit: when cleared to 1, the block is unprotected; when set  
to 0, the block is protected.  
3. Block volatile protection bit: when cleared to 1, the block is unprotected; when set to 0,  
the block is protected.  
Figure 8: Lock Register Program Flowchart  
Start  
ENTER LOCK REGISTER COMMAND SET  
Address-data (unlock) cycle 1  
Address-data (unlock) cycle 2  
Address-data cycle 3  
PROGRAM LOCK REGISTER  
Address-data cycle 1  
Address-data cycle 2  
Polling algorithm  
Yes  
Done?  
No  
No  
DQ5 = 1  
Yes  
Success:  
Failure:  
EXIT PROTECTION COMMAND SET  
(Returns to device read mode)  
Address-data cycle 1  
READ/RESET  
(Returns device to read mode)  
Address-data cycle 2  
1. Each lock register bit can be programmed only once.  
Notes:  
2. See the Block Protection Command Definitions table for address-data cycle details.  
PDF: 09005aef84ecabef  
m29dw_256g.pdf - Rev. A 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.  
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