欢迎访问ic37.com |
会员登录 免费注册
发布采购

M29DW256G7ANF6F 参数 Datasheet PDF下载

M29DW256G7ANF6F图片预览
型号: M29DW256G7ANF6F
PDF下载: 下载PDF文件 查看货源
内容描述: [Micron Parallel NOR Flash Embedded Memory]
分类和应用:
文件页数/大小: 78 页 / 1023 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号M29DW256G7ANF6F的Datasheet PDF文件第24页浏览型号M29DW256G7ANF6F的Datasheet PDF文件第25页浏览型号M29DW256G7ANF6F的Datasheet PDF文件第26页浏览型号M29DW256G7ANF6F的Datasheet PDF文件第27页浏览型号M29DW256G7ANF6F的Datasheet PDF文件第29页浏览型号M29DW256G7ANF6F的Datasheet PDF文件第30页浏览型号M29DW256G7ANF6F的Datasheet PDF文件第31页浏览型号M29DW256G7ANF6F的Datasheet PDF文件第32页  
256Mb: 3V Embedded Parallel NOR Flash  
Standard Command Definitions – Address-Data Cycles  
Table 14: Standard Command Definitions – Address-Data Cycles, 16-Bit (Continued)  
Note 1 applies to entire table  
Address and Data Cycles  
3rd 4th  
1st  
2nd  
5th  
6th  
Command and  
Code/Subcode  
Bus  
Size  
A
D
A
D
A
D
A
D
A
D
A
D
Notes  
ENHANCED  
BUFFERED  
x16 BAd  
(00)  
29  
PROGRAM CONFIRM  
(29h)  
EXIT ENHANCED  
BUFFERED  
x16  
X
90  
X
00  
PROGRAM  
COMMAND SET (90h)  
PROGRAM SUSPEND  
(B0h)  
x16 BKA  
x16 BKA  
B0  
30  
B0  
30  
PROGRAM RESUME  
(30h)  
WRITE TO BUFFER PRO- x16 BAd  
GRAM SUSPEND (B0h)  
WRITE TO BUFFER PRO- x16 BAd  
GRAM RESUME (30h)  
ERASE Operations  
CHIP ERASE (80/10h)  
x16  
x16  
555  
X
AA 2AA  
80  
55  
10  
555  
555  
80  
80  
555  
555  
AA  
AA  
2AA  
2AA  
55  
55  
555  
10  
30  
UNLOCK BYPASS  
CHIP ERASE (80/10h)  
X
5
BLOCK ERASE (80/30h)  
x16  
x16  
555  
X
AA 2AA  
55  
30  
BAd  
10  
5
UNLOCK BYPASS  
80  
BAd  
BLOCK ERASE (80/30h)  
ERASE SUSPEND (B0h)  
ERASE RESUME (30h)  
x16 BKA  
x16 BKA  
B0  
30  
1. A = Address; D = Data; X = "Don't Care;" BKA = Bank address; BAd = Any address in the  
block; N = Number of bytes to be programmed; PA = Program address; PD = Program  
data; Gray shading = Not applicable. All values in the table are hexadecimal. Some com-  
mands require both a command code and subcode.  
Notes:  
2. These cells represent READ cycles (versus WRITE cycles for the others).  
3. AUTO SELECT enables the device to read the manufacturer code, device code, block pro-  
tection status, and extended memory block protection indicator.  
4. AUTO SELECT addresses and data are specified in the Electronic Signature table and the  
Extended Memory Block Protection table.  
5. For any UNLOCK BYPASS ERASE/PROGRAM command, the first two UNLOCK cycles are  
unnecessary.  
6. BAd must be the same as the address loaded during the WRITE TO BUFFER PROGRAM  
3rd and 4th cycles.  
7. WRITE TO BUFFER PROGRAM operation: maximum cycles 36 (x16). UNLOCK BYPASS  
WRITE TO BUFFER PROGRAM operation: maximum cycles = 34 (x16). WRITE TO BUFFER  
PDF: 09005aef84ecabef  
m29dw_256g.pdf - Rev. A 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
28  
© 2012 Micron Technology, Inc. All rights reserved.  
 复制成功!