P33-65nm
1.0
1.1
Functional Description
Introduction
This document provides information about the Numonyx
TM
StrataFlash
®
Embedded
Memory (P33-65nm) device and describes its features, operations, and specifications.
P33-65nm is the latest generation of Numonyx
TM
StrataFlash
®
Embedded Memory
(P33-65nm) devices. P33-65nm device will be offered in 64-Mbit up through 2-Gbit
densities. This document covers specifically 256-Mbit and 512-Mbit (256M/256M)
product information. Benefits include more density in less space, high-speed interface
NOR device, and support for code and data storage. Features include high-performance
synchronous-burst read mode, fast asynchronous access times, low power, flexible
security options, and two industry-standard package choices.
P33-65nm is manufactured using Numonyx™ 65nm ETOX™ X process technology.
1.2
Overview
This family of devices provides high performance at low voltage on a 16-bit data bus.
Individually erasable memory blocks are sized for optimum code and data storage.
Upon initial power-up or return from reset, the device defaults to asynchronous page-
mode read. Configuring the RCR enables synchronous burst-mode reads. In
synchronous burst mode, output data is synchronized with a user-supplied clock signal.
A WAIT signal provides an easy CPU-to-flash memory synchronization.
In addition to the enhanced architecture and interface, the device incorporates
technology that enables fast factory program and erase operations. Designed for low-
voltage systems, the P33 Family Flash memory supports read operations with VCC at
3.0V, and erase and program operations with VPP at 3.0V or 9.0V. Buffered Enhanced
Factory Programming provides the fastest flash array programming performance with
VPP at 9.0V, which increases factory throughput. With VPP at 3.0V, VCC and VPP can be
tied together for a simple, ultra low power design. In addition to voltage flexibility, a
dedicated VPP connection provides complete data protection when VPP
≤
V
PPLK
.
The Command User Interface is the interface between the system processor and all
internal operations of the device. An internal Write State Machine automatically
executes the algorithms and timings necessary for block erase and program. A Status
Register indicates erase or program completion and any errors that may have occurred.
An industry-standard command sequence invokes program and erase automation. Each
erase operation erases one block. The Erase Suspend feature allows system software to
pause an erase cycle to read or program data in another block. Program Suspend
allows system software to pause programming to read other locations. Data is
programmed in word increments (16 bits).
The P33 Family Flash memory one-time-programmable (OTP) register allows unique
flash device identification that can be used to increase system security. The individual
Block Lock feature provides zero-latency block locking and unlocking. The P33-65nm
device adds enhanced protection via Password Access Mode which allows user to
protect write and/or read access to the defined blocks. In addition, the P33 Family
Flash memory may also provide the backward compatible OTP permanent lock feature.
Datasheet
5
Aug 2009
Order Number:320003-08
MICRON [ MICRON TECHNOLOGY ]
