Numonyx
TM
StrataFlash
®
Embedded Memory
(P33-65nm)
256-Mbit, 512-Mbit (256M/256M)
Datasheet
Product Features
High performance:
— 95ns initial access time for Easy BGA
— 105ns initial access time for TSOP
— 25ns 16-word asynchronous-page read
mode
— 52MHz with zero wait states, 17ns clock-to-
data output synchronous-burst read mode
— 4-, 8-, 16-, and continuous-word options
for burst mode
— Buffered Enhanced Factory Programming at
2.0MByte/s (typ) using 512-word buffer
— 3.0V buffered programming at 1.5MByte/s
(Typ) using 512-word buffer
Architecture:
— Multi-Level Cell Technology: Highest
Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
— Blank Check to verify an erase block
Voltage and Power:
— V
CC
(core) voltage: 2.3 V – 3.6 V
— V
CCQ
(I/O) voltage: 2.3 V – 3.6 V
— Standby current: 65uA (Typ) for 256-Mbit
— Continuous synchronous read current: 21
mA (Typ)/24 mA (Max) at 52 MHz
Security:
— One-Time Programmable Registers:
— 64 unique factory device identifier bits
— 2112 user-programmable OTP bits
—
—
—
—
—
Absolute write protection: V
PP
= V
SS
Power-transition erase/program lockout
Individual zero-latency block locking
Individual block lock-down capability
Password Access feature
Software:
— 20µs (Typ) program suspend
— 20µs (Typ) erase suspend
— Numonyx™ Flash Data Integrator optimized
— Basic Command Set and Extended Function
Interface Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 56-Lead TSOP package (256-Mbit only)
— 64-Ball Easy BGA package (256, 512-Mbit)
— 16-bit wide data bus
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
— Minimum 100,000 erase cycles per block
— 65nm ETOX™ X process technology
Datasheet
1
Aug 2009
Order Number: 320003-08
MICRON [ MICRON TECHNOLOGY ]
