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JS28F256P30B 参数 Datasheet PDF下载

JS28F256P30B图片预览
型号: JS28F256P30B
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 98 页 / 1366 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Common Flash Interface  
Table 33: Partition Region 1 Information (Continued)  
Hex Offset  
P = 10Ah  
Description  
Address  
Bottom/Top  
Optional Flash features and commands  
Length  
Bottom/Top  
(P+42)h  
(P+43)h  
(P+44)h  
(P+45)h  
(P+46)h  
(P+47)h  
Partition 1 (erase block type 2) programming region information:  
Bits 0-7 = x, 2nx = Programming region aligned size (bytes)  
Bits 8-14 = reserved for future use  
Bit 15 = legacy flash operation (ignore 0:7)  
Bits 16 - 23 = y = Control mode valid size in bytes Bits 24 - 31 =  
reserved  
6
14C:  
14D:  
14E:  
14F:  
150:  
151:  
Bits 32 - 39 = z = Control mode invalid size in bytes  
Bits 40 - 46 = reserved  
Bit 47 = legacy flash operation (ignore 23:16 and 39:32)  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
65  
© 2013 Micron Technology, Inc. All rights reserved.  
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