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JS28F256P30B 参数 Datasheet PDF下载

JS28F256P30B图片预览
型号: JS28F256P30B
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 98 页 / 1366 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Flowcharts  
Figure 18: Buffer Program Procedure  
Start  
X = X + 1  
Write buffer data,  
start address  
Write buffer data,  
(at block address)  
within buffer range  
No  
Device  
supports buffer  
writes?  
No  
Use single word  
programming  
X = 0  
Yes  
Abort  
No  
X = N  
bufferred program  
?
Set timeout or  
loop counter  
Yes  
Yes  
Get next  
target address  
Write confirm D0h  
(at block address)  
Write to another  
block address  
Buffered program  
aborted  
Read status register  
(at block address)  
CE# and OE# LOW  
updates status register  
Issue WRITE-to-BUFFER  
command E8h  
(at block address)  
No  
Yes  
SR7?  
1 = Ready  
0 = Busy  
0
Suspend  
program loop  
Suspend  
program  
Read status register  
SR7 = Valid  
(at block address )  
1
No  
Full status  
check (if desired)  
Device  
ready? SR7 = 0/1  
Timeout  
or count expired?  
0 = No  
Yes  
Another  
buffered  
programming  
?
Yes  
1 = Yes  
Write word count (N-1)  
N = 0 corresponds to  
count = 1  
No  
(at block address)  
Program  
complete  
1. Word count values on DQ0:DQ15 are loaded into the count register. Count ranges for  
this device are N = 0000h to 01FFh.  
Notes:  
2. Device outputs the status register when read.  
3. Write buffer contents will be programmed at the device start or destination address.  
4. Align the start address on a write buffer boundary for maximum programming perform-  
ance; that is, A[9:1] of the start address = 0).  
5. Device aborts the BUFFERED PROGRAM command if the current address is outside the  
original block address.  
6. Status register indicates an improper command sequence if the BUFFERED PROGRAM  
command is aborted. Follow this with a CLEAR STATUS REGISTER command.  
7. Device defaults to SR output data after BUFFERED PROGRAMMING SETUP command  
(E8h) is issued . CE# or OE# must be toggled to update the status register . Don’t issue  
the READ SR command (70h); it is interpreted by the device as buffer word count.  
8. Full status check can be done after erase and write sequences complete. Write FFh after  
the last operation to reset the device to read array mode.  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
69  
© 2013 Micron Technology, Inc. All rights reserved.  
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