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SST39VF010-70-4C-WHE-RVL-T 参数 Datasheet PDF下载

SST39VF010-70-4C-WHE-RVL-T图片预览
型号: SST39VF010-70-4C-WHE-RVL-T
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 128KX8, 70ns, PDSO32]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 28 页 / 255 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Product Description
The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are
128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprie-
tary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability compared with alternate approaches. The
SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The
SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC
standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39LF010/020/040 and SST39VF010/020/040
devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data#
Polling to indicate the completion of Program operation. To protect against inadvertent write, they have
on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a
wide spectrum of applications, they are offered with a guaranteed typical endurance of 100,000 cycles.
Data retention is rated at greater than 100 years.
The SST39LF010/020/040 and SST39VF010/020/040 devices are suited for applications that require
convenient and economical updating of program, configuration, or data memory. For all system appli-
cations, they significantly improves performance and reliability, while lowering power consumption.
They inherently use less energy during Erase and Program than alternative flash technologies. The
total energy consumed is a function of the applied voltage, current, and time of application. Since for
any given voltage range, the SuperFlash technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or Program operation is less than alternative
flash technologies. These devices also improve flexibility while lowering the cost for program, data, and
configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet surface mount requirements, the SST39LF010/020/040 and SST39VF010/020/040 devices
are offered in 32-lead PLCC and 32-lead TSOP packages. See Figures 2 and 3 for pin assignments.
©2012 Silicon Storage Technology, Inc.
DS25023B
06/13
2