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SST39VF010-70-4C-WHE-RVL-T 参数 Datasheet PDF下载

SST39VF010-70-4C-WHE-RVL-T图片预览
型号: SST39VF010-70-4C-WHE-RVL-T
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 128KX8, 70ns, PDSO32]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 28 页 / 255 K
品牌: MICROCHIP [ MICROCHIP ]
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1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash  
SST39LF010 / SST39LF020 / SST39LF040  
SST39VF010 / SST39VF020 / SST39VF040  
Data Sheet  
internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the com-  
mand sequence, Figure 10 for timing diagram, and Figure 18 for the flowchart. Any commands written  
during the Chip-Erase operation will be ignored.  
Write Operation Status Detection  
The SST39LF010/020/040 and SST39VF010/020/040 devices provide two software means to detect  
the completion of a Write (Program or Erase) cycle, in order to optimize the system write cycle time.  
The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-  
Write detection mode is enabled after the rising edge of WE# which initiates the internal Program or  
Erase operation.  
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a  
Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this  
occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with  
either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software  
routine should include a loop to read the accessed location an additional two (2) times. If both reads  
are valid, then the device has completed the Write cycle, otherwise the rejection is valid.  
©2012 Silicon Storage Technology, Inc.  
DS25023B  
06/13  
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