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PIC17C752T-25I/P 参数 Datasheet PDF下载

PIC17C752T-25I/P图片预览
型号: PIC17C752T-25I/P
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能8位CMOS微控制器的EPROM [High-Performance 8-Bit CMOS EPROM Microcontrollers]
分类和应用: 微控制器可编程只读存储器电动程控只读存储器
文件页数/大小: 320 页 / 2172 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC17C75X  
20.2  
DC CHARACTERISTICS:  
PIC17LC752/756 (Commercial, Industrial)  
PIC17LC752/756 (Commercial, Industrial)  
Standard Operating Conditions (unless otherwise stated)  
Operating temperature  
DC CHARACTERISTICS  
Param.  
-40˚C  
0˚C  
TA +85˚C for industrial and  
TA +70˚C for commercial  
No.  
Sym  
Characteristic  
Min  
Typ† Max Units  
Conditions  
D001  
D002  
VDD  
Supply Voltage  
3.0  
6.0  
V
V
VDR  
RAM Data Retention  
Voltage (Note 1)  
1.5 *  
Device in SLEEP mode  
D003  
D004  
VPOR  
VDD start voltage to  
ensure internal  
Power-on Reset signal  
VSS  
V
See section on Power-on Reset for  
details  
SVDD  
VBOR  
VDD rise rate to  
ensure proper  
operation  
0.010 *  
V/ms See section on Power-on Reset for  
details  
D005  
D006  
Brown-out Reset  
voltage trip point  
3.6  
4.3  
V
VPORTP Power-on reset trip  
point  
1.8  
V
VDD = VPORTP  
D010  
D011  
D014  
IDD  
Supply Current  
(Note 2)  
3
6
85  
6 *  
12  
150  
mA FOSC = 4 MHz (Note 4)  
mA  
FOSC = 8 MHz  
µA  
FOSC = 32 kHz,  
(EC osc configuration)  
D021  
IPD  
Power-down Current  
(Note 3)  
< 1  
5
µA  
VDD = 5.5V, WDT disabled  
Module Differential  
Current  
D023  
D024  
D026  
IBOR  
IWDT  
IAD  
BOR circuitry  
Watchdog Timer  
A/D converter  
300 500  
µA  
µA  
µA  
VDD = 4.5V, BODEN enabled  
VDD = 5.5V  
10  
1
35  
VDD = 5.5V, A/D not converting  
*
These parameters are characterized but not tested.  
Data in "Typ" column is at 5V, 25˚C unless otherwise stated. These parameters are for design guidance  
only and are not tested.  
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.  
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin  
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an  
impact on the current consumption.  
The test conditions for all IDD measurements in active operation mode are:  
OSC1=external square wave, from rail to rail; all I/O pins tristated, pulled to VDD or VSS, T0CKI = VDD, MCLR  
= VDD; WDT disabled.  
Current consumed from the oscillator and I/O’s driving external capacitive or resistive loads needs to be con-  
sidered.  
For the RC oscillator, the current through the external pull-up resistor (R) can be estimated as: VDD / (2 R).  
For capacitive loads, the current can be estimated (for an individual I/O pin) as (CL VDD) f  
CL = Total capacitive load on the I/O pin; f = average frequency the I/O pin switches.  
The capacitive currents are most significant when the device is configured for external execution (includes  
extended microcontroller mode).  
3: The power down current in SLEEP mode does not depend on the oscillator type. Power-down current is  
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.  
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be esti-  
mated by the formula IR = VDD/2Rext (mA) with Rext in kOhm.  
DS30264A-page 226  
Preliminary  
1997 Microchip Technology Inc.  
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