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PIC16F687-I/ML 参数 Datasheet PDF下载

PIC16F687-I/ML图片预览
型号: PIC16F687-I/ML
PDF下载: 下载PDF文件 查看货源
内容描述: 20引脚基于闪存的8位CMOS微控制器采用纳瓦技术 [20-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路时钟
文件页数/大小: 294 页 / 5272 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16F631/677/685/687/689/690  
17.3 DC Characteristics: PIC16F631/677/685/687/689/690-E (Extended)  
Standard Operating Conditions (unless otherwise stated)  
Operating temperature -40°C TA +125°C for extended  
DC CHARACTERISTICS  
Conditions  
Param  
No.  
Device Characteristics  
Min  
Typ†  
Max  
Units  
VDD  
Note  
D020E  
Power-down Base  
Current(IPD)  
0.15  
0.20  
0.35  
90  
1.2  
1.5  
1.8  
500  
2.2  
4.0  
7.0  
60  
μA  
μA  
μA  
nA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
μA  
2.0  
3.0  
5.0  
3.0  
2.0  
3.0  
5.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
3.0  
5.0  
3.0  
5.0  
WDT, BOR, Comparators, VREF and  
T1OSC disabled  
(2)  
-40°C TA +25°C  
(1)  
D021E  
1.0  
2.0  
3.0  
42  
WDT Current  
(1)  
D022E  
D023E  
BOR Current  
85  
122  
45  
(1)  
32  
Comparator Current , both  
comparators enabled  
60  
78  
120  
30  
160  
36  
(1)  
D024E  
CVREF Current (high range)  
45  
55  
75  
95  
(1)  
D024AE*  
D025E  
39  
47  
CVREF Current (low range)  
59  
72  
98  
124  
TBD  
TBD  
TBD  
1.6  
1.9  
TBD  
TBD  
4.0  
4.6  
6.0  
0.30  
0.36  
TBD  
TBD  
T1OSC Current  
(1)  
D026E  
D027E  
Legend:  
A/D Current , no conversion in  
progress  
VP6 Current  
TBD = To Be Determined  
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are  
not tested.  
Note 1: The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square wave, from  
rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled.  
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading  
and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current  
consumption.  
3: For RC oscillator configurations, current through REXT is not included. The current through the resistor can be extended  
by the formula IR = VDD/2REXT (mA) with REXT in kΩ.  
4: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is  
enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max  
values should be used when calculating total current consumption.  
5: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with  
the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.  
© 2007 Microchip Technology Inc.  
DS41262D-page 233  
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