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PIC16C620A-04E/SS 参数 Datasheet PDF下载

PIC16C620A-04E/SS图片预览
型号: PIC16C620A-04E/SS
PDF下载: 下载PDF文件 查看货源
内容描述: 基于EPROM的8位CMOS微控制器 [EPROM-Based 8-Bit CMOS Microcontroller]
分类和应用: 微控制器和处理器外围集成电路光电二极管可编程只读存储器电动程控只读存储器时钟
文件页数/大小: 108 页 / 622 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16C62X  
12.3 DC CHARACTERISTICS: PIC16C62XA/CR62XA-04 (Commercial, Industrial, Extended)  
PIC16C62XA/CR62XA-20 (Commercial, Industrial, Extended)  
PIC16LC62XA/LCR62XA-04 (Commercial, Industrial)  
PIC16LC62XA/LCR62XA-20 (Commercial, Industrial)  
Standard Operating Conditions (unless otherwise stated)  
Operating temperature –40°C TA +85°C for industrial and  
0°C TA +70°C for commercial and  
–40°C TA +125°C for extended  
Param Sym  
No.  
Characteristic  
Min Typ† Max Units  
Conditions  
D001  
D001A  
VDD  
Supply Voltage  
3.0  
4.5  
-
-
5.5  
5.5  
V
V
XT, RC and LP osc configuration  
HS osc configuration  
D002  
D003  
D004  
D005  
D010  
VDR  
RAM Data Retention  
Voltage (Note 1)  
1.5*  
VSS  
V
Device in SLEEP mode  
VPOR  
SVDD  
VBOR  
IDD  
VDD start voltage to  
ensure Power-on Reset  
V
See section on power-on reset for details  
VDD rise rate to ensure  
Power-on Reset  
0.05*  
V/ms See section on power-on reset for details  
Brown-out Detect Voltage  
3.7  
3.7  
4.0  
4.0  
4.3  
4.4  
V
BOREN configuration bit is cleared  
(Extended)  
Supply Current (Note 2)  
1.2  
2.0  
mA XT and RC osc configuration  
FOSC = 4 MHz, VDD = 5.5V, WDT disabled  
(Note 4)  
D010A  
35  
70  
µA  
LP osc configuration, PIC16C62XA-04  
only  
FOSC = 32 kHz, VDD = 4.0V, WDT disabled  
HS osc configuration  
D013  
D020  
3.0  
1.0  
7.5  
mA FOSC = 20 MHz, VDD = 5.5V, WDT disabled  
IPD  
Power Down Current (Note 3)  
WDT Current (Note 5)  
2.5  
15  
µA  
µA  
VDD=4.0V, WDT disabled  
(125°C)  
IWDT  
IBOR  
6.0  
75  
60  
90  
10  
12  
150  
µA  
µA  
µA  
VDD=4.0V  
(125°C)  
BOR enabled, VDD = 5.0V  
D023  
Brown-out Reset Current  
(Note 5)  
Comparator Current for each  
Comparator (Note 5)  
VREF Current (Note 5)  
ICOMP  
IVREF  
75  
µA  
µA  
VDD = 4.0V  
VDD = 4.0V  
200  
*
These parameters are characterized but not tested.  
Data in "Typ" column is at 5.0V, 25°C, unless otherwise stated. These parameters are for design guidance only and are  
not tested.  
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.  
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and  
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-  
sumption.  
The test conditions for all IDD measurements in active operation mode are:  
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,  
MCLR = VDD; WDT enabled/disabled as specified.  
3: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with  
the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.  
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the  
formula Ir = VDD/2Rext (mA) with Rext in k.  
5: The current is the additional current consumed when this peripheral is enabled. This current should be added to the  
base IDD or IPD measurement.  
1998 Microchip Technology Inc.  
Preliminary  
DS30235G-page 83  
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