PIC16C62X
12.1
DC CHARACTERISTICS:
PIC16C62X-04 (Commercial, Industrial, Extended)
PIC16C62X-20 (Commercial, Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature –40°C ≤ TA ≤ +85°C for industrial and
0°C ≤ TA ≤ +70°C for commercial and
–40°C ≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
D001
D001A
Vdd
Supply Voltage
3.0
4.5
-
-
6.0
5.5
V
V
XT, RC and LP osc configuration
HS osc configuration
D002
D003
D004
D005
D010
Vdr
RAM Data Retention
Voltage (Note 1)
–
1.5*
Vss
–
–
–
–
V
Device in SLEEP mode
Vpor
Svdd
VBOR
Idd
VDD start voltage to
ensure Power-on Reset
–
V
See section on power-on reset for details
VDD rise rate to ensure
Power-on Reset
0.05*
V/ms See section on power-on reset for details
Brown-out Detect Voltage
3.7
3.7
4.0
4.0
4.3
4.4
V
BOREN configuration bit is cleared
(Extended)
Supply Current (Note 2)
–
1.8
3.3
mA
XT and RC osc configuration
FOSC = 4 MHz, VDD = 5.5V, WDT dis-
abled (Note 4)
D010A
–
35
70
µA
LP osc configuration, PIC16C62X-04
only
FOSC = 32 kHz, VDD = 4.0V, WDT dis-
abled
D013
D020
–
–
9.0
1.0
20
mA
HS osc configuration
FOSC = 20 MHz, VDD = 5.5V, WDT dis-
abled
Ipd
Power Down Current (Note 3)
WDT Current (Note 5)
2.5
15
µA
µA
VDD=4.0V, WDT disabled
(125°C)
∆IWDT
∆IBOR
–
–
–
–
6.0
20
25
µA
µA
VDD=4.0V
(125°C)
BOR enabled, VDD = 5.0V
D023
Brown-out Reset Current (Note 5)
Comparator Current for each Com-
parator (Note 5)
350
425 µA
100 µA
300 µA
∆ICOMP
∆IVREF
VDD = 4.0V
VDD = 4.0V
VREF Current (Note 5)
*
These parameters are characterized but not tested.
†
Data in "Typ" column is at 5.0V, 25°C, unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,
MCLR = VDD; WDT enabled/disabled as specified.
3: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with
the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the
formula Ir = VDD/2Rext (mA) with Rext in kΩ.
5: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the
base IDD or IPD measurement.
1998 Microchip Technology Inc.
Preliminary
DS30235G-page 81
MICROCHIP [ MICROCHIP ]
