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PIC16C620A-04E/SS 参数 Datasheet PDF下载

PIC16C620A-04E/SS图片预览
型号: PIC16C620A-04E/SS
PDF下载: 下载PDF文件 查看货源
内容描述: 基于EPROM的8位CMOS微控制器 [EPROM-Based 8-Bit CMOS Microcontroller]
分类和应用: 微控制器和处理器外围集成电路光电二极管可编程只读存储器电动程控只读存储器时钟
文件页数/大小: 108 页 / 622 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16C62X  
12.0 89ELECTRICAL SPECIFICATIONS  
Absolute Maximum Ratings †  
Ambient Temperature under bias .............................................................................................................. -40° to +125°C  
Storage Temperature................................................................................................................................. -65° to +150°C  
Voltage on any pin with respect to VSS (except VDD and MCLR)....................................................... -0.6V to VDD +0.6V  
Voltage on VDD with respect to VSS ................................................................................................................ 0 to +7.5V  
Voltage on MCLR with respect to VSS (Note 2)..................................................................................................0 to +14V  
Total power Dissipation (Note 1) ...............................................................................................................................1.0W  
Maximum Current out of VSS pin...........................................................................................................................300 mA  
Maximum Current into VDD pin .............................................................................................................................250 mA  
Input Clamp Current, IIK (VI <0 or VI> VDD)......................................................................................................................±20 mA  
Output Clamp Current, IOK (VO <0 or VO>VDD) ...............................................................................................................±20 mA  
Maximum Output Current sunk by any I/O pin........................................................................................................25 mA  
Maximum Output Current sourced by any I/O pin...................................................................................................25 mA  
Maximum Current sunk by PORTA and PORTB ...................................................................................................200 mA  
Maximum Current sourced by PORTA and PORTB..............................................................................................200 mA  
Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD - IOH} + {(VDD-VOH) x IOH} + (VOl x IOL)  
NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at those or any other conditions above  
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions  
for extended periods may affect device reliability.  
Note: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.  
Thus, a series resistor of 50-100should be used when applying a "low" level to the MCLR pin rather  
than pulling this pin directly to VSS.  
Note: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.  
Thus, a series resistor of 50-100should be used when applying a "low" level to the MCLR pin rather  
than pulling this pin directly to VSS.  
1998 Microchip Technology Inc.  
Preliminary  
DS30235G-page 79  
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