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MCP201 参数 Datasheet PDF下载

MCP201图片预览
型号: MCP201
PDF下载: 下载PDF文件 查看货源
内容描述: LIN收发器,稳压器 [LIN Transceiver with Voltage Regulator]
分类和应用: 稳压器
文件页数/大小: 40 页 / 397 K
品牌: MICROCHIP [ MICROCHIP ]
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MCP201  
2.3  
AC Specifications  
Electrical Characteristics:  
Unless otherwise indicated, all limits are specified for:  
VBAT = 6.0V to 18.0V  
AC Specifications  
TAMB = -40°C to +125°C  
Symbol  
Parameter  
Min  
Typical  
Max  
Units Conditions  
Bus Interface  
|dV/dt|  
|dV/dt|  
Slope Rising and Falling Edges  
1.0  
2.0  
2.0  
4.0  
3.0  
6.0  
V/µs (40% to 60%), No Load  
Slope Rising and Falling edges  
ALTERNATE  
V/µs (Note 1), No Load  
tTRANSPD  
tRECPD  
Propagation Delay of Transmitter  
Propagation Delay of Receiver  
6.0  
6.0  
2.0  
µs  
µs  
µs  
tRECPD = max  
(tRECPDR or tRECPDF  
tRECSYM = max  
)
tRECSYM  
Symmetry of Propagation Delay of  
Receiver Rising Edge with Respect  
to Falling Edge  
-2.0  
tTRANSSYM Symmetry of Propagation Delay of  
Transmitter Rising Edge with  
-2.0  
2.0  
µs  
tTRANSSYM = max  
(tTRANSPDF - tRANSPDR  
)
Respect to Falling Edge  
Voltage Regulator  
tBACTVE  
tVEVR  
tVREGPO  
Bus Activity to Voltage Regulator  
Enabled  
10  
50  
40  
200  
2.5  
µs  
µs  
Bus debounce time  
Voltage Regulator Enabled to  
Ready  
(Note 2)  
R
Voltage Regulator Enabled to  
Ready after POR  
ms  
(Note 2) CLOAD = 25 nF  
tCSOR  
tCSPD  
Chip Select to Operation Ready  
Chip Select to Power-down  
0
0
50  
200  
40  
µs  
µs  
µs  
(Note 2)  
(Note 2) No CLOAD  
tSHUTDOWN Short-Circuit to Shutdown  
450  
Characterized but not  
tested  
tSCREC  
Short-Circuit Recovery Time  
2.0  
ms  
Characterized but not  
tested (Note 3)  
Note 1: The mode does not conform to LIN Bus specification version 1.3.  
2: Time depends on external capacitance and load.  
3: Internal current limited. 2.0 ms typical recovery time (RLBUS = 0Ω, TX = 0.4 VREG, VLBUS = VBAT, TAMB =  
25C. Recovery time highly dependent on ambient temperature, package, and thermal resistance).  
TABLE 2-1:  
Sym  
MCP201 THERMAL SPECIFICATIONS  
Parameter  
Min  
Typical  
Max  
Units  
Test Conditions  
θRECOVERY Recovery Temperature  
+135  
°C  
Characterized but not  
tested  
(junction temperature)  
θSHUTDOWN Shutdown Temperature  
+155  
2.0  
°C  
Characterized but not  
tested  
(junction temperature)  
tTHERM  
Thermal Recovery Time  
ms  
Characterized but not  
(after Fault condition removed)  
tested (Note 1)  
Note 1: Internal current limited. 2.0 ms typical recovery time (RLBUS = 0Ω, TX = 0.4 VREG, VLBUS = VBAT, TAMB =  
25C. Recovery time highly dependent on ambient temperature, package, and thermal resistance).  
DS21730F-page 16  
© 2007 Microchip Technology Inc.  
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