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MCP1727-1202E/SN 参数 Datasheet PDF下载

MCP1727-1202E/SN图片预览
型号: MCP1727-1202E/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 1.5A ,低电压,低静态电流LDO稳压器 [1.5A, Low Voltage, Low Quiescent Current LDO Regulator]
分类和应用: 线性稳压器IC调节器电源电路光电二极管输出元件
文件页数/大小: 32 页 / 787 K
品牌: MICROCHIP [ MICROCHIP ]
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MCP1727  
In addition to the LDO pass element power dissipation,  
there is power dissipation within the MCP1727 as a  
result of quiescent or ground current. The power  
dissipation as a result of the ground current can be  
calculated using the following equation:  
5.0  
APPLICATION CIRCUITS/  
ISSUES  
5.1  
Typical Application  
The MCP1727 is used for applications that require high  
LDO output current and a power good output.  
EQUATION 5-2:  
PI(GND) = VIN(MAX) × IVIN  
Where:  
MCP1727-2.5  
V
= 3.3V  
V
= 2.5V @ 1.5A  
IN  
OUT  
PI(GND  
=
Power dissipation due to the  
quiescent current of the LDO  
1
2
3
4
V
V
V
OUT  
8
7
6
5
IN  
IN  
C
R
1
1
Sense  
10 µF  
C
2
10 µF  
10kΩ  
VIN(MAX)  
IVIN  
=
=
Maximum input voltage  
SHDN C  
DELAY  
GND PWRGD  
Current flowing in the VIN pin  
with no LDO output current  
(LDO quiescent current)  
On  
Off  
C
3
1000 pF  
The total power dissipated within the MCP1727 is the  
sum of the power dissipated in the LDO pass device  
PWRGD  
and the P(IGND  
) term. Because of the CMOS  
construction, the typical IGND for the MCP1727 is  
120 µA. Operating at a maximum of 3.465V results in a  
power dissipation of 0.49 milli-Watts. For most  
applications, this is small compared to the LDO pass  
device power dissipation and can be neglected.  
FIGURE 5-1:  
Typical Application Circuit.  
5.1.1  
APPLICATION CONDITIONS  
Package Type = 3x3DFN8  
The maximum continuous operating junction  
temperature specified for the MCP1727 is +125°C. To  
estimate the internal junction temperature of the  
MCP1727, the total internal power dissipation is  
multiplied by the thermal resistance from junction to  
ambient (RθJA) of the device. The thermal resistance  
from junction to ambient for the 3x3 DFN package is  
estimated at 41° C/W.  
Input Voltage Range = 3.3V ± 5%  
IN maximum = 3.465V  
IN minimum = 3.135V  
VDROPOUT (max) = 0.525V  
OUT (typical) = 2.5V  
OUT = 1.5A maximum  
V
V
V
I
PDISS (typical) = 1.2W  
EQUATION 5-3:  
Temperature Rise = 49.2°C  
TJ(MAX) = PTOTAL × RθJA + TAMAX  
5.2  
Power Calculations  
TJ(MAX) = Maximum continuous junction  
temperature  
5.2.1  
POWER DISSIPATION  
PTOTAL = Total device power dissipation  
The internal power dissipation within the MCP1727 is a  
function of input voltage, output voltage, output current  
and quiescent current. Equation 5-1 can be used to  
calculate the internal power dissipation for the LDO.  
RθJA = Thermal resistance from junction to  
ambient  
TAMAX = Maximum ambient temperature  
EQUATION 5-1:  
PLDO = (VIN(MAX)) VOUT(MIN)) × IOUT(MAX))  
Where:  
PLDO  
=
LDO Pass device internal  
power dissipation  
VIN(MAX)  
=
=
Maximum input voltage  
VOUT(MIN)  
LDO minimum output voltage  
DS21999B-page 20  
© 2007 Microchip Technology Inc.  
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