HV9910B
1.0
ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
V
IN
to GND...................................................... -0.5V to +470V
V
DD
to GND.......................................................................12V
CS, LD, PWMD, GATE, RT to GND... ....-0.3V to (V
DD
+ 0.3V)
Operating temperature ..................................-40°C to +125°C
Storage temperature .....................................-65°C to +150°C
Continuous power dissipation (T
A
= +25°C)
8-lead SOIC ...............................................630 mW
16-lead SOIC ...........................................1300 mW
Note:
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions, above those indicated in the
operational listings of this specification, is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
1.1
ELECTRICAL SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (SHEET 1 OF 2)
1
Parameter
Note
Min
Typ
Max
Units Conditions
TABLE 1-1:
Symbol
Input
V
INDC
I
INSD
Input DC supply voltage
range
2
Shut-down mode supply
current
3
8.0
-
-
0.5
450
1.0
V
mA
DC input voltage
Pin PWMD to GND
Internal Regulator
V
DD
Internally regulated voltage
-
7.25
7.5
7.75
V
V
IN
= 8.0V, I
DD(ext)
= 0, 500pF
at GATE; R
T
= 226kΩ, PWMD
= V
DD
VIN = 8.0 - 450V, I
DD(ext)
= 0,
500pF at GATE; RT = 226kΩ,
PWMD = V
DD
I
DD(ext)
= 0 - 1.0mA, 500pF at
GATE; R
T
= 226kΩ, PWMD =
V
DD
V
DD
rising
V
DD
falling
V
IN
= 8.0V
∆V
DD, line
Line regulation of V
DD
-
0
-
1.0
V
∆V
DD, load
UVLO
∆UVLO
I
IN,MAX
Load regulation of V
DD
V
DD
undervoltage lockout
threshold
V
DD
undervoltage lockout
hysteresis
Current that the regulator
can supply before IC goes
into UVLO
Pin PWMD input low voltage
Pin PWMD input high voltage
Pin PWMD pull-down resis-
tance at PWMD
-
0
6.45
-
5.0
-
6.7
500
-
100
6.95
-
-
mV
V
mV
mA
-
4
PWM Dimming
V
EN(lo)
V
EN(hi)
R
EN
-
2.0
50
-
-
100
0.8
-
150
V
V
kΩ
V
IN
= 8.0 - 450V
V
IN
= 8.0 - 450V
V
PWMD
= 5.0V
-
2015 Microchip Technology Inc.
DS20005344A-page 3
MICROCHIP [ MICROCHIP TECHNOLOGY ]
