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93LC66BXTISNG 参数 Datasheet PDF下载

93LC66BXTISNG图片预览
型号: 93LC66BXTISNG
PDF下载: 下载PDF文件 查看货源
内容描述: 4K的Microwire兼容串行EEPROM [4K Microwire Compatible Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 24 页 / 390 K
品牌: MICROCHIP [ MICROCHIP ]
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93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C  
2.6  
ERASE/WRITE DISABLE And ENABLE (EWDS/EWEN)  
The 93XX66A/B/C powers up in the ERASE/WRITE  
Disable (EWDS) state. All Programming modes must be  
preceded by an ERASE/WRITE Enable (EWEN) instruc-  
tion. Once the EWENinstruction is executed, program-  
ming remains enabled until an EWDS instruction is  
executed or Vcc is removed from the device.  
To protect against accidental data disturbance, the  
EWDS instruction can be used to disable all ERASE/  
WRITE functions and should follow all programming  
operations. Execution of a READinstruction is indepen-  
dent of both the EWENand EWDSinstructions.  
FIGURE 2-5:  
EWDS TIMING  
TCSL  
CS  
CLK  
DI  
•••  
X
1
0
0
0
0
X
FIGURE 2-6:  
EWEN TIMING  
TCSL  
CS  
CLK  
DI  
•••  
1
0
0
1
1
X
X
devices) output string. The output data bits will toggle on  
the rising edge of the CLK and are stable after the  
specified time delay (TPD). Sequential read is possible  
when CS is held high. The memory data will automati-  
cally cycle to the next register and output sequentially.  
2.7  
READ  
The READ instruction outputs the serial data of the  
addressed memory location on the DO pin. A dummy  
zero bit precedes the 8-bit (If ORG pin is low or A-Version  
devices) or 16-bit (If ORG pin is high or B-version  
FIGURE 2-7:  
READ TIMING  
CS  
CLK  
DI  
An  
•••  
A0  
0
1
1
0
HIGH-Z  
DO  
Dx  
D0  
Dx  
D0  
Dx  
D0  
•••  
•••  
•••  
DS21795B-page 8  
2003 Microchip Technology Inc.  
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