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93LC66BXTISNG 参数 Datasheet PDF下载

93LC66BXTISNG图片预览
型号: 93LC66BXTISNG
PDF下载: 下载PDF文件 查看货源
内容描述: 4K的Microwire兼容串行EEPROM [4K Microwire Compatible Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 24 页 / 390 K
品牌: MICROCHIP [ MICROCHIP ]
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93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C  
The DO pin indicates the READY/BUSY status of the  
2.4  
ERASE  
device if CS is brought high after a minimum of 250 ns  
low (TCSL). DO at logical ‘0’ indicates that programming  
is still in progress. DO at logical ‘1’ indicates that the  
register at the specified address has been erased and  
the device is ready for another instruction.  
The ERASEinstruction forces all data bits of the speci-  
fied address to the logical ‘1’ state. CS is brought low  
following the loading of the last address bit. This falling  
edge of the CS pin initiates the self-timed program-  
ming cycle, except on ‘93C’ devices where the rising  
edge of CLK before the last address bit initiates the  
write cycle.  
Note:  
Issuing a Start bit and then taking CS low  
will clear the READY/BUSY status from  
DO.  
FIGURE 2-1:  
ERASE TIMING FOR 93AA AND 93LC DEVICES  
TCSL  
CS  
CHECK STATUS  
CLK  
DI  
1
1
AN  
AN-1 AN-2  
A0  
•••  
1
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
TWC  
FIGURE 2-2:  
ERASE TIMING FOR 93C DEVICES  
TCSL  
CS  
CHECK STATUS  
CLK  
DI  
1
1
AN  
AN-1 AN-2  
A0  
•••  
1
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
TWC  
DS21795B-page 6  
2003 Microchip Technology Inc.  
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