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93LC66BXTISNG 参数 Datasheet PDF下载

93LC66BXTISNG图片预览
型号: 93LC66BXTISNG
PDF下载: 下载PDF文件 查看货源
内容描述: 4K的Microwire兼容串行EEPROM [4K Microwire Compatible Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 24 页 / 390 K
品牌: MICROCHIP [ MICROCHIP ]
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93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C  
The DO pin indicates the READY/BUSY status of the  
device, if CS is brought high after a minimum of 250 ns  
2.8  
WRITE  
The WRITEinstruction is followed by 8 bits (If ORG is  
low or A-version devices) or 16 bits (If ORG pin is high  
or B-version devices) of data which are written into the  
specified address. For 93AA66A/B/C and 93LC66A/B/C  
devices, after the last data bit is clocked into DI, the  
falling edge of CS initiates the self-timed auto-erase and  
programming cycle. For 93C66A/B/C devices, the self-  
timed auto-erase and programming cycle is initiated by  
the rising edge of CLK on the last data bit.  
low (TCSL). DO at logical ‘0’ indicates that programming  
is still in progress. DO at logical ‘1’ indicates that the  
register at the specified address has been written with  
the data specified and the device is ready for another  
instruction.  
Note:  
Issuing a Start bit and then taking CS low  
will clear the READY/BUSY status from  
DO.  
FIGURE 2-8:  
WRITE TIMING FOR 93AA AND 93LC DEVICES  
TCSL  
CS  
CLK  
DI  
0
1
1
An  
A0  
Dx  
D0  
•••  
•••  
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
Twc  
FIGURE 2-9:  
WRITE TIMING FOR 93C DEVICES  
TCSL  
CS  
CLK  
DI  
0
1
1
An  
A0  
Dx  
D0  
•••  
•••  
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
Twc  
2003 Microchip Technology Inc.  
DS21795B-page 9  
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