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93LC46B-IP 参数 Datasheet PDF下载

93LC46B-IP图片预览
型号: 93LC46B-IP
PDF下载: 下载PDF文件 查看货源
内容描述: 1K 2.5V Microwire串行EEPROM [1K 2.5V Microwire Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 12 页 / 160 K
品牌: MICROCHIP [ MICROCHIP ]
 浏览型号93LC46B-IP的Datasheet PDF文件第3页浏览型号93LC46B-IP的Datasheet PDF文件第4页浏览型号93LC46B-IP的Datasheet PDF文件第5页浏览型号93LC46B-IP的Datasheet PDF文件第6页浏览型号93LC46B-IP的Datasheet PDF文件第8页浏览型号93LC46B-IP的Datasheet PDF文件第9页浏览型号93LC46B-IP的Datasheet PDF文件第10页浏览型号93LC46B-IP的Datasheet PDF文件第11页  
93LC46A/B  
3.8  
WRITE  
3.9  
Write All (WRAL)  
The WRITE instruction is followed by 8 bits (93LC46A)  
or 16 bits (93LC46B) of data which are written into the  
specified address. After the last data bit is put on the DI  
pin, the falling edge of CS initiates the self-timed auto-  
erase and programming cycle.  
The Write All (WRAL) instruction will write the entire  
memory array with the data specified in the command.  
The WRAL cycle is completely self-timed and com-  
mences at the falling edge of the CS. Clocking of the  
CLK pin is not necessary after the device has entered  
the WRAL cycle.The WRAL command does include an  
automatic ERAL cycle for the device. Therefore, the  
WRAL instruction does not require an ERAL instruction  
but the chip must be in the EWEN status.  
The DO pin indicates the READY/BUSY status of the  
device, if CS is brought high after a minimum of 250 ns  
low (TCSL) and before the entire write cycle is complete.  
DO at logical “0” indicates that programming is still in  
progress. DO at logical “1” indicates that the register at  
the specified address has been written with the data  
specified and the device is ready for another instruc-  
tion.  
The DO pin indicates the READY/BUSY status of the  
device if CS is brought high after a minimum of 250 ns  
low (TCSL).  
FIGURE 3-7: WRITE TIMING  
TCSL  
CS  
CLK  
0
1
1
An  
A0  
Dx  
D0  
•••  
•••  
DI  
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
Twc  
FIGURE 3-8: WRAL TIMING  
TCSL  
CS  
CLK  
0
0
1
X
1
0
•••  
Dx  
•••  
DI  
X
D0  
TSV  
TCZ  
HIGH-Z  
BUSY  
READY  
DO  
HIGH-Z  
TWL  
Guaranteed at Vcc = 4.5V to +6.0V.  
1997 Microchip Technology Inc.  
Preliminary  
DS21173D-page 7  
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