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93LC46B-IP 参数 Datasheet PDF下载

93LC46B-IP图片预览
型号: 93LC46B-IP
PDF下载: 下载PDF文件 查看货源
内容描述: 1K 2.5V Microwire串行EEPROM [1K 2.5V Microwire Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 12 页 / 160 K
品牌: MICROCHIP [ MICROCHIP ]
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93LC46A/B  
3.2  
Data In (DI) and Data Out (DO)  
3.0  
FUNCTIONAL DESCRIPTION  
Instructions, addresses, and write data are clocked into  
the DI pin on the rising edge of the clock (CLK).The DO  
pin is normally held in a HIGH-Z state except when  
reading data from the device, or when checking the  
READY/BUSY status during a programming operation.  
The READY/BUSY status can be verified during an  
ERASE/WRITE operation by polling the DO pin; DO  
low indicates that programming is still in progress, while  
DO high indicates the device is ready.The DO will enter  
the HIGH-Z state on the falling edge of the CS.  
It is possible to connect the Data In (DI) and Data Out  
(DO) pins together. However, with this configuration, if  
A0 is a logic-high level, it is possible for a “bus conflict”  
to occur during the “dummy zero” that precedes the  
READ operation. Under such a condition the voltage  
level seen at DO is undefined and will depend upon the  
relative impedances of DO and the signal source driv-  
ing A0.The higher the current sourcing capability of A0,  
the higher the voltage at the DO pin.  
3.3  
Data Protection  
3.1  
START Condition  
During power-up, all programming modes of operation  
are inhibited until Vcc has reached a level greater than  
2.2V. During power-down, the source data protection  
circuitry acts to inhibit all programming modes when  
Vcc has fallen below 2.2V at nominal conditions.  
The START bit is detected by the device if CS and DI  
are both high with respect to the positive edge of CLK  
for the first time.  
Before a START condition is detected, CS, CLK, and DI  
may change in any combination (except to that of a  
START condition), without resulting in any device oper-  
ation (ERASE, ERAL, EWDS, EWEN, READ, WRITE,  
and WRAL). As soon as CS is high, the device is no  
longer in the standby mode.  
The ERASE/WRITE Disable (EWDS) and ERASE/  
WRITE Enable (EWDS) commands give additional pro-  
tection against accidentally programming during nor-  
mal operation.  
After power-up, the device is automatically in the  
EWDS mode. Therefore, an EWEN instruction must be  
performed before any ERASE or WRITE instruction can  
be executed.  
An instruction following a START condition will only be  
executed if the required amount of opcodes,  
addresses, and data bits for any particular instruction is  
clocked in.  
After execution of an instruction (i.e., clock in or out of  
the last required address or data bit) CLK and DI  
become don't care bits until a new START condition is  
detected.  
FIGURE 3-1: SYNCHRONOUS DATA TIMING  
VIH  
CS  
TCSS  
TCKH  
TCKL  
VIL  
TCSH  
VIH  
CLK  
DI  
VIL  
TDIS  
TDIH  
VIH  
VIL  
TCZ  
TPD  
TPD  
VOH  
DO  
(READ)  
TCZ  
VOL  
VOH  
TSV  
DO  
(PROGRAM)  
STATUS VALID  
VOL  
Note: AC Test Conditions: VIL = 0.4V, VIH = 2.4V  
DS21173D-page 4  
Preliminary  
1997 Microchip Technology Inc.  
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