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25LC512-E/MF 参数 Datasheet PDF下载

25LC512-E/MF图片预览
型号: 25LC512-E/MF
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的SPI总线串行EEPROM [512 Kbit SPI Bus Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 32 页 / 602 K
品牌: MICROCHIP [ MICROCHIP ]
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25AA512/25LC512  
2.0  
2.1  
FUNCTIONAL DESCRIPTION  
Principles of Operation  
BLOCK DIAGRAM  
The 25XX512 is a 65,536 byte Serial EEPROM  
designed to interface directly with the Serial Periph-  
eral Interface (SPI) port of many of today’s popular  
microcontroller families, including Microchip’s PIC®  
microcontrollers. It may also interface with microcon-  
trollers that do not have a built-in SPI port by using  
discrete I/O lines programmed properly in firmware to  
match the SPI protocol.  
STATUS  
Register  
HV Generator  
EEPROM  
Array  
Memory  
Control  
Logic  
X
I/O Control  
Logic  
Dec  
The 25XX512 contains an 8-bit instruction register. The  
device is accessed via the SI pin, with data being  
clocked in on the rising edge of SCK. The CS pin must  
be low and the HOLD pin must be high for the entire  
operation.  
Page Latches  
Y Decoder  
SI  
SO  
Table 2-1 contains a list of the possible instruction  
bytes and format for device operation. All instructions,  
addresses, and data are transferred MSB first, LSB  
last.  
CS  
SCK  
Sense Amp.  
R/W Control  
HOLD  
WP  
Data (SI) is sampled on the first rising edge of SCK  
after CS goes low. If the clock line is shared with other  
peripheral devices on the SPI bus, the user can assert  
the HOLD input and place the 25XX512 in ‘HOLD’  
mode. After releasing the HOLD pin, operation will  
resume from the point when the HOLD was asserted.  
VCC  
VSS  
TABLE 2-1:  
INSTRUCTION SET  
Instruction Name  
Instruction Format  
Description  
READ  
WRITE  
WREN  
WRDI  
RDSR  
WRSR  
PE  
0000 0011  
0000 0010  
0000 0110  
0000 0100  
0000 0101  
0000 0001  
0100 0010  
1101 1000  
1100 0111  
1010 1011  
1011 1001  
Read data from memory array beginning at selected address  
Write data to memory array beginning at selected address  
Set the write enable latch (enable write operations)  
Reset the write enable latch (disable write operations)  
Read STATUS register  
Write STATUS register  
Page Erase – erase one page in memory array  
Sector Erase – erase one sector in memory array  
Chip Erase – erase all sectors in memory array  
Release from Deep power-down and read electronic signature  
Deep Power-Down mode  
SE  
CE  
RDID  
DPD  
DS22021B-page 6  
Preliminary  
© 2007 Microchip Technology Inc.  
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