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12CE673 参数 Datasheet PDF下载

12CE673图片预览
型号: 12CE673
PDF下载: 下载PDF文件 查看货源
内容描述: 8引脚, 8位CMOS微控制器与A / D转换器和EEPROM数据存储器 [8-Pin, 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory]
分类和应用: 转换器存储微控制器可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 116 页 / 649 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC12CE67X  
12.2  
DC Characteristics:  
PIC12LCE673-04 (Commercial, Industrial)  
PIC12LCE674-04 (Commercial, Industrial)  
Standard Operating Conditions (unless otherwise specified)  
Operating temperature 0˚C TA +70˚C (commercial)  
–40˚C TA +85˚C (industrial)  
DC CHARACTERISTICS  
Param  
No.  
Characteristic  
Supply Voltage  
Sym Min Typ† Max Units  
Conditions  
D001  
D002*  
D003  
VDD  
2.5  
-
5.5  
V
V
V
XT, INTRC, EXTRC and LP osc configuration  
(DC - 4 MHz)  
RAM Data Retention VDR  
Voltage (Note 1)  
-
-
TBD  
VSS  
-
-
Device in SLEEP mode  
VDD start voltage to  
ensure internal  
Power-on Reset  
signal  
VPOR  
SVDD  
IDD  
See section on Power-on Reset for details  
D004*  
VDD rise rate to  
ensure internal  
Power-on Reset  
signal  
TBD  
-
-
V/ms See section on Power-on Reset for details  
D010  
Supply Current  
(Note 2)  
-
-
TBD TBD mA XT, EXTRC osc configuration  
FOSC = 4 MHz, VDD = 3.0V (Note 4)  
TBD TBD mA INTRC osc configuration  
FOSC = 4 MHz, VDD = 3.0V (Note 5)  
D010B  
D010A  
TBD TBD µA LP osc configuration  
FOSC = 32 kHz, VDD = 3.0V, WDT disabled  
D020  
D021  
D021A  
Power-down Current IPD  
(Note 3)  
-
-
-
TBD  
TBD  
TBD  
µA VDD = 3.0V, WDT enabled, –40°C to +85°C  
µA VDD = 3.0V, WDT disabled, 0°C to +70°C  
µA VDD = 3.0V, WDT disabled, –40°C to +85°C  
*
These parameters are characterized but not tested.  
Data in "Typ" column is at 5V, 25˚C unless otherwise stated. These parameters are for design guidance only  
and are not tested.  
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.  
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin  
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an  
impact on the current consumption.  
The test conditions for all IDD measurements in active operation mode are:  
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to VDD  
MCLR = VDD; WDT enabled/disabled as specified.  
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is  
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.  
4: For EXTRC osc configuration, current through Rext is not included. The current through the resistor can be  
estimated by the formula Ir = VDD/2Rext (mA) with Rext in kOhm.  
5: INTRC calibration value is for 4 MHz nominal at 5V, 25°C.  
DS40181B-page 84  
Preliminary  
1998 Microchip Technology Inc.  
 
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