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MIC4422 参数 Datasheet PDF下载

MIC4422图片预览
型号: MIC4422
PDF下载: 下载PDF文件 查看货源
内容描述: 9A峰值低侧MOSFET驱动器双极/ CMOS / DMOS工艺 [9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process]
分类和应用: 驱动器
文件页数/大小: 12 页 / 239 K
品牌: MIC [ MIC GROUP RECTIFIERS ]
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MIC4421/4422  
Micrel, Inc.  
Capacitive Load Power Dissipation  
Transition Power Dissipation  
Dissipation caused by a capacitive load is simply the energy  
placed in, or removed from, the load capacitance by the  
driver. The energy stored in a capacitor is described by the  
equation:  
Transition power is dissipated in the driver each time its  
output changes state, because during the transition, for a  
very brief interval, both the N- and P-channel MOSFETs in  
the output totem-pole are ON simultaneously, and a current  
is conducted through them from VS to ground. The transition  
power dissipation is approximately:  
E = 1/2 C V2  
Asthisenergyislostinthedrivereachtimetheloadischarged  
or discharged, for power dissipation calculations the 1/2 is  
removed. This equation also shows that it is good practice  
not to place more voltage in the capacitor than is necessary,  
as dissipation increases as the square of the voltage applied  
to the capacitor. For a driver with a capacitive load:  
PT = 2 f VS (A•s)  
where (A•s) is a time-current factor derived from the typical  
characteristic curve “Crossover Energy vs. Supply Volt-  
age.”  
Total power (PD) then, as previously described is just  
PD = PL + PQ + PT  
PL = f C (VS)2  
where:  
Definitions  
f = Operating Frequency  
C = Load Capacitance  
VS =Driver Supply Voltage  
CL = Load Capacitance in Farads.  
D = Duty Cycle expressed as the fraction of time the  
input to the driver is high.  
Inductive Load Power Dissipation  
f = Operating Frequency of the driver in Hertz  
For inductive loads the situation is more complicated. For  
the part of the cycle in which the driver is actively forcing  
current into the inductor, the situation is the same as it is in  
the resistive case:  
IH = Power supply current drawn by a driver when both  
inputs are high and neither output is loaded.  
IL = Power supply current drawn by a driver when both  
inputs are low and neither output is loaded.  
PL1 = I2 RO D  
However, in this instance the R required may be either  
the on resistance of the driver whOen its output is in the high  
state, or its on resistance when the driver is in the low state,  
depending on how the inductor is connected, and this is still  
only half the story. For the part of the cycle when the induc-  
tor is forcing current through the driver, dissipation is best  
described as  
ID = Output current from a driver in Amps.  
PD = Total power dissipated in a driver in Watts.  
PL = Power dissipated in the driver due to the driver’s  
load in Watts.  
PQ = Power dissipated in a quiescent driver in Watts.  
PL2 = I VD (1 – D)  
PT = Power dissipated in a driver when the output  
changes states (“shoot-through current”) in Watts.  
NOTE: The “shoot-through” current from a dual  
transition (once up, once down) for both drivers is  
stated in Figure 7 in ampere-nanoseconds. This  
figure must be multiplied by the number of repeti-  
tions per second (frequency) to find Watts.  
where V is the forward drop of the clamp diode in the driver  
(generalDly around 0.7V). The two parts of the load dissipation  
must be summed in to produce PL  
PL = PL1 + PL2  
Quiescent Power Dissipation  
RO = Output resistance of a driver in Ohms.  
VS = Power supply voltage to the IC in Volts.  
Quiescent power dissipation (P , as described in the input  
section) depends on whether thQe input is high or low. A low  
input will result in a maximum current drain (per driver) of  
0.2mA; a logic high will result in a current drain of ≤ 3.0mA.  
Quiescent power can therefore be found from:  
PQ = VS [D IH + (1 – D) IL]  
where:  
I = quiescent current with input high  
IHL = quiescent current with input low  
D = fraction of time input is high (duty cycle)  
VS = power supply voltage  
August 2005  
9
M9999-081005  
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