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W78M32VP-100BM 参数 Datasheet PDF下载

W78M32VP-100BM图片预览
型号: W78M32VP-100BM
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash,]
分类和应用: 内存集成电路
文件页数/大小: 47 页 / 1902 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W78M32VP-XBX  
 Programming to the same word address multiple times  
The “write-buffer-page” addresses must be the same for all  
address/data pairs loaded into the write buffer. (This means Write  
Buffer Programming cannot be performed across multiple “write-  
buffer-pages.” This also means that Write Buffer Programming  
cannot be performed across multiple sectors. If the system attempts  
to load programming data outside of the selected “write-buffer-  
page”, the operation ABORTs.)  
without intervening erases is permitted.  
SINGLE WORD PROGRAMMING  
Single word programming mode is one method of programming the  
Flash. In this mode, four Flash command write cycles are used to  
program an individual Flash address. The data for this programming  
operation could be 8 or 16-bits wide.  
After writing the StartingAddress/Data pair, the system then writes  
the remaining address/data pairs into the write buffer.  
While the single word programming method is supported by most  
Spansion devices, in general Single Word Programming is not  
recommended for devices that support Write Buffer Programming.  
See Table 39 for the required bus cycles and Figure 4 for the  
owchart. When the Embedded Program algorithm is complete,  
the device then returns to the read mode and addresses are no  
longer latched. The system can determine the status of the program  
operation by reading the DQ status bits. Refer to Write Operation  
Status for information on these status bits.  
Note that if a Write Buffer address location is loaded multiple  
times, the “address/data pair” counter is decremented for every  
data load operation. Also, the last data loaded at a location before  
the “Program Buffer to Flash” confirm command is the data  
programmed into the device. It is the software's responsibility to  
comprehend ramications of loading a write-buffer location more  
than once. The counter decrements for each data load operation,  
NOT for each unique write-buffer-address location. Once the  
specied number of write buffer locations have been loaded, the  
system must then write the “Program Buffer to Flash” command  
at the Sector Address. Any other address/data write combinations  
abort the Write Buffer Programming operation. The Write Operation  
Status bits should be used while monitoring the last address  
location loaded into the write buffer. This eliminates the need to  
store an address in memory because the system can load the  
last address location, issue the program conrm command at the  
last loaded address location, and then check the write operation  
status at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1  
should be monitored to determine the device status during Write  
Buffer Programming.  
 During programming, any command (except the Suspend  
Program command) is ignored.  
 The Secured Silicon Sector, Autoselect, and CFI functions  
are unavailable when a program operation is inprogress.  
 A hardware reset immediately terminates the program  
operation. The program command sequence should  
 be reinitiated once the device has returned to the read  
mode, to ensure data integrity.  
 Programming to the same address multiple times  
continuously (for example, “walking” a bit within a word) is  
permitted.  
The write-buffer “embedded” programming operation can be  
suspended using the standard suspend/resume commands. Upon  
successful completion of the Write Buffer Programming operation,  
the device returns to READ mode. The Write Buffer Programming  
Sequence is ABORTED under any of the following conditions:  
WRITE BUFFER PROGRAMMING  
Write Buffer Programming allows the system to write a maximum  
of 32 words in one programming operation. This results in a  
faster effective word programming time than the standard “word”  
programming algorithms.  
 Load a value that is greater than the page buffer size during  
the “Number of Locations to Program” step.  
The Write Buffer Programming command sequence is initiated by  
rst writing two unlock cycles. This is followed by a third write cycle  
containing the Write Buffer Load command written at the Sector  
Address in which programming occurs. At this point, the system  
writes the number of “word locations minus 1” that are loaded  
into the page buffer at the Sector Address in which programming  
occurs. This tells the device how many write buffer addresses are  
loaded with data and therefore when to expect the “Program Buffer  
to Flash” conrm command. The number of locations to program  
cannot exceed the size of the write buffer or the operation aborts.  
(Number loaded = the number of locations to program minus 1.  
For example, if the system programs 6 address locations, then  
05h should be written to the device.)  
 Write to an address in a sector different than the one  
specied during the Write-Buffer-Load command.  
 Write an Address/Data pair to a different write-buffer-page  
than the one selected by the “Starting Address” during the  
“write buffer data loading” stage of the operation.  
 Writing anything other than the Program to Buffer Flash  
Command after the specied number of “data load” cycles.  
 The ABORT condition is indicated by DQ1 = 1, DQ7 =  
DATA# (for the “last address location loaded”), DQ6 =  
TOGGLE, DQ5 = 0. This indicates that the Write Buffer  
Programming Operation was ABORTED. A “Write-to- Buffer-  
Abort reset” command sequence is required when using the  
write buffer Programming features in Unlock Bypass mode.  
Note that the Secured Silicon sector, autoselect, and CFI  
functions are unavailable when a program operation is in  
progress.  
The system then writes the starting address/data combination. This  
starting address is the rst address/data pair to be programmed,  
and selects the “write-buffer-page” address. All subsequent  
address/data pairs must fall within the elected-write-buffer-page.  
The “write-buffer-page” is selected by using the addresses  
AMAX–A5.  
Write buffer programming is allowed in any sequence of memory  
(or address) locations. These ash devices are capable of handling  
Microsemi Corporation reserves the right to change products or specications without notice.  
August 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 15  
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com