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W3E32M64SA-200B2M 参数 Datasheet PDF下载

W3E32M64SA-200B2M图片预览
型号: W3E32M64SA-200B2M
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, 0.8ns, CMOS, PBGA219, BGA-219]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 16 页 / 921 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3E32M64SA-XB2X  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Unit  
V
Voltage on VCC, VCCQ Supply relative to Vss  
Voltage on I/O pins relative to VSS  
Storage Temperature, Plastic  
-1 to 3.6  
-1 to 3.6  
V
-55 to +125  
°C  
NOTE: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other  
conditions greater than those indicated in the operational sections of this specication is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
BGA THERMAL RESISTANCE  
Description  
Symbol  
Theta JB  
Theta JC  
Typical  
TBD  
Units  
°C/W  
°C/W  
Notes  
Junction to Board  
Junction to Case (Top)  
1
1
TBD  
The JEDEC JESD51 specications are used as the default modeling environment and boundary conditions. Using still air, horizontal mounting and the 2s2p board. Published material properties are used as input  
to derive the thermal characteristics of the module. Your application conditions will most likely differ from the JESD51 2s2p board denition specications; therefore, Microsemi PMG recommends a customized  
evaluation of thermal resistances based on the actual conditions in thermally-challenged situations. Delphi models are available for most products upon request.  
DC Electrical Characteristics And Operating Conditions (Notes 1, 6)  
Parameter/Condition  
Symbol  
Min  
2.3  
2.3  
-2  
Max  
2.7  
2.7  
2
Units  
V
Supply Voltage  
VCC  
VCCQ  
II  
I/O Supply Voltage  
V
Input Leakage Current: Any input 0V VIN VCC (All other pins not under test = 0V)  
Input Leakage Address Current (All other pins not under test = 0V)  
Output Leakage Current: I/Os are disabled; 0V VOUT VCC  
Output Levels: Full drive option  
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT  
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT  
μA  
μA  
μA  
II  
-8  
8
IOZ  
-5  
5
IOH  
IOL  
IOHR  
IOLR  
VREF(AC)  
VTT  
-16.8  
16.8  
-9  
mA  
mA  
mA  
mA  
)
)
Output Levels: Reduced drive option  
High Current (VOUT = VCCQ - 0.763V, minimum VREF, minimum VTT  
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT  
)
9
)
I/O Reference Voltage  
0.49 x VCCQ  
VREF - 0.04  
0.51 x VCCQ  
VREF + 0.04  
V
V
I/O Termination Voltage (not applied directly to dram)  
AC INPUT OPERATING CONDITIONS  
Parameter/Condition  
Input High (Logic 1) Voltage  
Input Low (Logic 0) Voltage  
Symbol  
VIH(AC)  
Min  
VREF + 0.310  
Max  
-
Units  
V
VIL (AC)  
-
VREF - 0.310  
V
Microsemi Corporation reserves the right to change products or specications without notice.  
December 2014 © 2014 Microsemi Corporation. All rights reserved.  
Rev. 1  
9
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp