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W3E32M64SA-200B2M 参数 Datasheet PDF下载

W3E32M64SA-200B2M图片预览
型号: W3E32M64SA-200B2M
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, 0.8ns, CMOS, PBGA219, BGA-219]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 16 页 / 921 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3E32M64SA-XB2X  
FIGURE 3 – MODE REGISTER DEFINITION  
TABLE 1 – BURST DEFINITION  
Order of Accesses Within a Burst  
BA1  
BA0 A12 A11 A10  
A9  
A8 A7 A6 A5 A4 A3 A2 A1 A0  
Address Bus  
Burst  
Length  
Starting Column  
Address  
Type = Sequential  
Type = Interleaved  
Mode Register (Mx)  
A0  
0*  
0*  
Operating Mode  
CAS Latency BT  
Burst Length  
2
4
0
1
A0  
0
1
0
1
A0  
0
1
0
0-1  
1-0  
0-1  
1-0  
*
M14 and M13  
(BA0 and BA1 must be  
"0, 0" to select  
the base mode register  
(vs. the extended  
mode register).  
A1  
0
0
1
1
A1  
0
0
1
1
Burst Length  
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
M2 M1 M0  
M3 = 0  
M3 = 1  
Reserved  
2
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved  
2
4
4
8
8
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
A2  
0
0
0
0
1
1
1
1
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
8
1
0
1
0
Burst Type  
M3  
0
1
Sequential  
Interleaved  
0
0
1
1
CAS Latency  
M6 M5 M4  
Reserved  
Reserved  
2
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
NOTES:  
1. For a burst length of two, A1-Ai select two-data-element block; A0 selects the starting column  
Reserved  
Reserved  
Reserved  
2.5  
within the block.  
2. For a burst length of four, A2-Ai select four-data-element block; A0-1 select the starting column  
within the block.  
Reserved  
3. For a burst length of eight, A3-Ai select eight-data-element block; A0-2 select the starting column  
within the block.  
M11  
M12  
M10  
0
M9  
0
M8  
0
M7  
0
M6-M0  
Valid  
Operating Mode  
4. Whenever a boundary of the block is reached within a given sequence above, the following  
access wraps within the block.  
0
0
Normal Operation  
0
0
0
1
0
0
Valid  
Normal Operation/Reset DLL  
-
-
-
-
-
-
All other states reserved  
-
AUTO REFRESH  
SELF REFRESH*  
AUTO REFRESH is used during normal operation of the DDR  
SDRAM and is analogous to CAS-BEFORE-RAS (CBR) REFRESH  
in conventional DRAMs. This command is non persistent, so it  
must be issued each time a refresh is required.  
The SELF REFRESH command can be used to retain data in  
the DDR SDRAM, even if the rest of the system is powered  
down. When in the self refresh mode, the DDR SDRAM retains  
data without external clocking. The SELF REFRESH command  
is initiated like an AUTO REFRESH command except CKE is  
disabled (LOW). The DLL is automatically disabled upon entering  
SELF REFRESH and is automatically enabled upon exiting SELF  
REFRESH (200 clock cycles must then occur before a READ  
command can be issued). Input signals except CKE are “Don’t  
Care” during SELF REFRESH. VREF voltage is also required for  
the full duration of SELF REFRESH.  
The addressing is generated by the internal refresh controller. This  
makes the address bits “Don’t Care” during an AUTO REFRESH  
command. Each DDR SDRAM requires AUTO REFRESH cycles  
at an average interval of tREFI  
.
To allow for improved efciency in scheduling and switching  
between tasks, some exibility in the absolute refresh interval is  
provided. A maximum of eight AUTO REFRESH commands can  
be posted to any given DDR SDRAM, meaning that the maximum  
absolute interval between any AUTO REFRESH command and  
the next AUTO REFRESH command is tREFC. This maximum  
absolute interval is to allow future support for DLL updates  
internal to the DDR SDRAM to be restricted to AUTO REFRESH  
cycles, without allowing excessive drift in tAC between updates.  
The procedure for exiting self refresh requires a sequence of  
commands. First, CK and CK# must be stable prior to CKE going  
back HIGH. Once CKE is HIGH, the DDR SDRAM must have  
NOP commands issued for tXSNR, because time is required for the  
completion of any internal refresh in progress.  
Asimple algorithm for meeting both refresh and DLL requirements  
is to apply NOPs for tXSNR time, then a DLL Reset and NOPs for  
200 additional clock cycles before applying any other command.  
* Self refresh available in commercial and industrial temperatures only.  
Although not a JEDEC requirement, to provide for future  
functionality features, CKE must be active (High) during theAUTO  
REFRESH period. The AUTO REFRESH period begins when the  
AUTO REFRESH command is registered and ends tRFC later.  
Microsemi Corporation reserves the right to change products or specications without notice.  
December 2014 © 2014 Microsemi Corporation. All rights reserved.  
Rev. 1  
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp