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W3E32M64S-266SBI 参数 Datasheet PDF下载

W3E32M64S-266SBI图片预览
型号: W3E32M64S-266SBI
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, 0.75ns, CMOS, PBGA208, 13 X 22 MM, PLASTIC, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 18 页 / 648 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3E32M64S-XSBX  
White Electronic Designs  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Unit  
V
Voltage on VCC, VCCQ Supply relative to Vss  
Voltage on I/O pins relative to Vss  
Operating Temperature TA (Mil)  
Operating Temperature TA (Ind)  
Storage Temperature, Plastic  
-1 to 3.6  
-1 to 3.6  
-55 to +125  
-40 to +85  
-55 to +125  
V
°C  
°C  
°C  
NOTE: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of  
the device at these or any other conditions greater than those indicated in the operational sections of this specication is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
CAPACITANCE (NOTE 13)  
Parameter  
Symbol  
CI1  
Max  
6
Unit  
pF  
Input Capacitance: CK/CK#  
Addresses, BA0-1 Input Capacitance  
Input Capacitance: All other input-only pins  
Input/Output Capacitance: I/Os  
CA  
20  
6
pF  
CI2  
pF  
CIO  
9
pF  
BGA THERMAL RESISTANCE  
Description  
Symbol  
Theta JA  
Theta JB  
Theta JC  
Typical  
15.7  
Units  
°C/W  
°C/W  
°C/W  
Notes  
Junction to Ambient (No Airow)  
Junction to Ball  
1
1
1
13.8  
Junction to Case (Top)  
2.8  
Refer to "PBGA Thermal Resistance Correlation" (Application Note) at www.wedc.com in the application notes section for modeling conditions.  
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1-5, 16, 52)  
VCC, VCCQ = +2.5V ± 0.2V; -55°C £ TA £ +125°C  
Parameter/Condition  
Symbol  
VCC  
VCCQ  
II  
Min  
2.3  
2.3  
-2  
Max  
2.7  
2.7  
2
Units  
V
Supply Voltage (36, 41)  
I/O Supply Voltage (36, 41, 44, 52)  
V
Input Leakage Current: Any input 0V VIN VCC (All other pins not under test = 0V)  
Input Leakage Address Current (All other pins not under test = 0V)  
Output Leakage Current: I/Os are disabled; 0V VOUT VCCQ  
μA  
μA  
μA  
II  
-8  
8
IOZ  
-5  
5
Output Levels: Full drive option (37, 39)  
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)  
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)  
IOH  
IOL  
-12  
12  
-9  
-
-
-
mA  
mA  
mA  
Output Levels: Reduced drive option (38, 39)  
High Current (VOUT = VCCQ - 0.763V, minimum VREF, minimum VTT)  
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT)  
IOHR  
IOLR  
VREF  
VTT  
9
-
mA  
V
I/O Reference Voltage (6,44)  
I/O Termination Voltage (7, 44)  
0.49 x VCCQ  
VREF - 0.04  
0.51 x VCCQ  
VREF + 0.04  
V
January 2008  
Rev. 6  
10  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
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