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W3E32M64S-266SBI 参数 Datasheet PDF下载

W3E32M64S-266SBI图片预览
型号: W3E32M64S-266SBI
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, 0.75ns, CMOS, PBGA208, 13 X 22 MM, PLASTIC, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 18 页 / 648 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3E32M64S-XSBX  
White Electronic Designs  
AC INPUT OPERATING CONDITIONS  
VCC, VCCQ = +2.5V ± 0.2V; -55°C £ TA £ 125°C  
Parameter/Condition  
Symbol  
VIH  
Min  
Max  
-
Units  
Input High (Logic 1) Voltage  
Input Low (Logic 0) Voltage  
VREF + 0.5  
-
V
V
VIL  
VREF - 0.5  
ICC SPECIFICATIONS AND CONDITIONS (NOTES 1-5, 10, 12, 14, 46)  
VCC, VCCQ = +2.5V ± 0.2V; -55°C £ TA £ +125°C  
MAX  
250Mbs  
Parameter/Condition  
Symbol  
333Mbs  
520  
200Mbs Units  
266Mbs  
OPERATING CURRENT: One bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and DQS inputs  
changing once per clock cyle; Address and control inputs changing once every two clock cycles; (22, 47)  
520  
460  
580  
20  
ICC0  
ICC1  
mA  
mA  
mA  
mA  
mA  
OPERATING CURRENT: One bank; Active-Read-Precharge; Burst = 4; tRC = tRC (MIN); tCK = tCK (MIN); IOUT  
0mA; Address and control inputs changing once per clock cycle (22, 47)  
=
640  
640  
20  
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; tCK = tCK (MIN); CKE  
= LOW; (23, 32, 49)  
20  
ICC2P  
ICC2F  
ICC3P  
IDLE STANDBY CURRENT: CS = HIGH; All banks idle; tCK = tCK (MIN); CKE = HIGH; Address and other control  
inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM (50)  
180  
180  
140  
160  
120  
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; tCK = tCK (MIN); CKE =  
LOW (23, 32, 49)  
140  
ACTIVE STANDBY CURRENT: CS = HIGH; CKE = HIGH; One bank; Active-Precharge; tRC = tRAS (MAX); tCK  
tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle; Address and other control inputs changing  
once per clock cycle (22)  
=
200  
200  
180  
ICC3N  
mA  
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active; Address and control inputs  
changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA (22, 47)  
660  
780  
660  
640  
580  
540  
ICC4R  
ICC4W  
mA  
mA  
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control inputs  
changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle (22)  
1,160  
40  
1,160  
40  
1,120  
40  
tREFC = tRFC (MIN) (49)  
ICC5  
ICC5A  
ICC6  
mA  
mA  
mA  
AUTO REFRESH CURRENT  
tREFC = 7.8125μs (27, 49)  
20  
20  
20  
SELF REFRESH CURRENT: CKE 0.2V  
Standard (11)  
OPERATING CURRENT: Four bank interleaving READs (BL=4) with auto precharge, tRC =tRC (MIN); tCK = tCK (MIN);  
Address and control inputs change only during Active READ or WRITE commands. (22, 48)  
1,620  
1,600  
1,400  
ICC7  
mA  
January 2008  
Rev. 6  
11  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
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