欢迎访问ic37.com |
会员登录 免费注册
发布采购

MX29LV160CBTC-70G 参数 Datasheet PDF下载

MX29LV160CBTC-70G图片预览
型号: MX29LV160CBTC-70G
PDF下载: 下载PDF文件 查看货源
内容描述: 16M - BIT [ 2Mx8 / 1Mx16 ] CMOS单电压3V仅限于Flash存储器 [16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管ISM频段
文件页数/大小: 66 页 / 923 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
 浏览型号MX29LV160CBTC-70G的Datasheet PDF文件第10页浏览型号MX29LV160CBTC-70G的Datasheet PDF文件第11页浏览型号MX29LV160CBTC-70G的Datasheet PDF文件第12页浏览型号MX29LV160CBTC-70G的Datasheet PDF文件第13页浏览型号MX29LV160CBTC-70G的Datasheet PDF文件第15页浏览型号MX29LV160CBTC-70G的Datasheet PDF文件第16页浏览型号MX29LV160CBTC-70G的Datasheet PDF文件第17页浏览型号MX29LV160CBTC-70G的Datasheet PDF文件第18页  
MX29LV160C T/B  
TABLE 7. SILICON ID CODE  
Pins  
A0  
A1  
Q15~Q8 Q7 Q6 Q5  
Q4 Q3 Q2 Q1 Q0 Code(Hex)  
Manufacturer code  
Word VIL  
Byte VIL  
VIL 00H  
1
1
1
1
0
0
0
0
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
1
1
0
0
0
0
1
1
0
0
0
0
0
0
0
0
0
0
1
1
1
0
00C2H  
VIL  
X
C2H  
Device code  
Word VIH VIL 22H  
Byte VIH VIL  
Word VIH VIL 22H  
22C4H  
for MX29LV160CT  
Device code  
X
C4H  
2249H  
for MX29LV160CB  
Sector Protection  
Verification  
Byte VIH VIL  
X
X
X
49H  
Word  
Byte  
X
X
VIH  
VIH  
01H (Protected)  
00H (Unprotected)  
READING ARRAY DATA  
RESET COMMAND  
The device is automatically set to reading array data  
after device power-up.No commands are required to re-  
trieve data.The device is also ready to read array data  
after completing an Automatic Program or Automatic  
Erase algorithm.  
Writing the reset command to the device resets the de-  
vice to reading array data.Address bits are don't care for  
this command.  
The reset command may be written between the se-  
quence cycles in an erase command sequence before  
erasing begins. This resets the device to reading array  
data.Once erasure begins, however, the device ignores  
reset commands until the operation is complete.  
After the device accepts an Erase Suspend command,  
the device enters the Erase Suspend mode.The system  
can read array data using the standard read timings,  
except that if it reads at an address within erase-sus-  
pended sectors, the device outputs status data. After  
completing a programming operation in the Erase Sus-  
pend mode, the system may once again read array data  
with the same exception. See "Erase Suspend/Erase  
Resume Commands" for more information on this mode.  
The system must issue the reset command to re-en-  
able the device for reading array data if Q5 goes high, or  
while in the "read silicon-ID" and "sector protect verify"  
mode. See the "Reset Command" section, next.  
The reset command may be written between the se-  
quence cycles in a program command sequence before  
programming begins. This resets the device to reading  
array data (also applies to programming in Erase Sus-  
pend mode). Once programming begins, however, the  
device ignores reset commands until the operation is  
complete.  
The reset command may be written between the se-  
quence cycles in an Automatic Select command se-  
quence. Once in the Automatic Select mode, the reset  
command must be written to return to reading array data  
(also applies to Automatic Select during Erase Suspend).  
If Q5 goes high during a program or erase operation, writ-  
ing the reset command returns the device to reading ar-  
ray data (also applies during Erase Suspend).  
P/N:PM1186  
REV. 1.2, JAN. 19, 2006  
14