R
MX29LV160BT/BB
AC CHARACTERISTICS
TA = -40oC to 85oC, VCC = 2.7V~3.6V
Table 11. Erase/Program Operations
29LV160BT/BB-70 29LV160BT/BB-90
SYMBOL
tWC
PARAMETER
MIN.
70
0
MAX.
MIN.
90
0
MAX.
UNIT
ns
Write Cycle Time (Note 1)
Address Setup Time
tAS
ns
tAH
Address Hold Time
45
35
0
45
45
0
ns
tDS
Data Setup Time
ns
tDH
Data Hold Time
ns
tOES
tGHWL
Output Enable Setup Time
Read Recovery Time Before Write
(OE High to WE Low)
0
0
ns
0
0
ns
tCS
CE Setup Time
0
0
ns
ns
ns
ns
us
tCH
CE Hold Time
0
0
tWP
Write Pulse Width
35
35
tWPH
tWHWH1
Write Pulse Width High
ProgrammingOperation(Note2)
(Byte/Wordprogramtime)
Sector Erase Operation (Note 2)
VCC Setup Time (Note 1)
Recovery Time from RY/BY
Sector Erase Valid to RY/BY Delay
Chip Erase Valid to RY/BY Delay
Program Valid to RY/BY Delay
Write pulse width for sector
protect (A9, OE Control)
Write pulse width for sector
unprotect (A9, OE Control)
Voltage transition time
OE setup time to WE active
30
30
9/11(typ.)
9/11(typ.)
tWHWH2
tVCS
0.7(typ.)
0.7(typ.)
sec
us
ns
ns
ns
ns
50
0
50
0
tRB
tBUSY
90
90
90
90
90
90
tWPP1
tWPP2
100ns
100ns
10us(typ.) 100ns
10us(typ.)
12ms(typ.) 100ns
12ms(typ.)
tVLHT
4
4
4
4
us
tOESP
us
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
P/N:PM1041
REV. 1.2, JUL. 01, 2004
26
Macronix [ MACRONIX INTERNATIONAL ]
