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MX26C1000BQI-12 参数 Datasheet PDF下载

MX26C1000BQI-12图片预览
型号: MX26C1000BQI-12
PDF下载: 下载PDF文件 查看货源
内容描述: 1M - BIT [ 128K ×8 ] CMOS多时间可编程EPROM [1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM]
分类和应用: 闪存存储内存集成电路可编程只读存储器电动程控只读存储器
文件页数/大小: 23 页 / 987 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX26C1000B  
erase operation. The two-step command prevents  
accidental alteration to memory array. Erase operation  
startswiththerisingedgeoftheWE pulseandterminates  
with the rising edge of the next WE pulse, which in this  
case is the erase verify command.  
COMMAND MODE  
The 1 Mbit MTP EPROMTM is in Command mode when  
highvoltageVPPH isappliedtotheVPP pin.Inthisstatethe  
available functions are Read, Program, Program Verify,  
Erase and Erase Verify. Reset are selected by writing  
commandstotheinputregister.Datafromtheregisterare  
input to the state machine. The output from the state  
machine determines the function of the device. The  
command register serves as a latch to store data for  
executing commands. It does not occupy address- able  
memory location. Standard microprocessor write timing  
is used. Table 2 defines the register commands. The  
commandregisteriswrittenbybringingWEtoalogic-low  
Level(VIL),whileCEislow.Addressesarelatchedonthe  
fallingedgeofWE,whiledataislatchedontherisingedge  
of the WE pulse.  
ERASE VERIFY  
Eacheraseoperationisfollowedbyaneraseverify. The  
commandA0Hiswrittenintothecommandregister.The  
address of the bytes to be verified is supplied with the  
command. The address is latched on the falling edge of  
the WE pulse. A reading FFH is returned to confirm all  
bits in the byte are erased. This sequence of Set Up  
Erase- Erase continues for each address until FFH is  
returned. This indicates the entire memory array is  
erasedandcompletestheoperation.Eraseverifyoperation  
starts at address 0000H and ends at the last address.  
Maximum erase pulse duration for the 1Mbit MTP  
EPROMTM is100mswithamaximum30pulses.Referto  
AC Characteristics and Waveforms for specific timing  
parameters.  
StandbyandOutputdisablefunctionsarethesameasin  
Read Mode, controlled by CE and OE. If the device is  
deselected during erasure, programming, or erase/  
programverification,thedevicedrawsactivecurrentuntil  
theoperationsterminate.  
READ COMMAND  
To read memory content, write 00H into the command  
register while high voltage is applied to  
VPP pin(VPP =VPPH).Microprocessorreadcycleretrieves  
the data . The device remains enable for read until the  
data in the command register are altered. The device is  
defaultinreadmodewhenpowerup.Thisistoensureno  
accidentalalterationofthememoryoccursduringpower  
transition. Refer to AC Read Characteristics and  
Waveforms for specific timing parameters.  
SET UP ERASE/ERASE  
Preprogram operation is not required prior to the erase  
operation. A sequence of commands is required to  
performacompleteeraseoperation:setuperase,erase,  
and erase verify. High voltage is applied to the V PP pin  
(VPP=VPPH).Thecommand20Hiswrittentothecommand  
register to initiate the set-up erase mode.  
ERASE OPERATION  
The same command, 20H, is again written to the  
command register. This second command starts bulk  
REV. 0.6, OCT. 04, 2001  
P/N: PM0767  
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