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MX25L4006EPI-12G 参数 Datasheet PDF下载

MX25L4006EPI-12G图片预览
型号: MX25L4006EPI-12G
PDF下载: 下载PDF文件 查看货源
内容描述: 串行外设接口兼容--mode 0和模式3 [Serial Peripheral Interface compatible --Mode 0 and Mode 3]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 52 页 / 1532 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX25L4006E  
(5) Read Data Bytes (READ)  
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on  
the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address  
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can  
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been  
reached.  
The sequence is shown as Figure 15.  
(6) Read Data Bytes at Higher Speed (FAST_READ)  
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and  
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at  
any location. The address is automatically increased to the next higher address after each byte data is shifted out,  
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when  
the highest address has been reached.  
The sequence is shown as Figure 16.  
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any im-  
pact on the Program/Erase/Write Status Register current cycle.  
(7) Dual Output Mode (DREAD)  
The DREAD instruction enable double throughput of Serial Flash in read mode. The address is latched on rising  
edge of SCLK, and data of every two bits(interleave on 1I/2O pins) shift out on the falling edge of SCLK at a maxi-  
mum frequency fT. The first address byte can be at any location. The address is automatically increased to the next  
higher address after each byte data is shifted out, so the whole memory can be read out at a single DREAD instruc-  
tion. The address counter rolls over to 0 when the highest address has been reached. Once writing DREAD instruc-  
tion, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.  
The sequence is shown as Figure 17.  
While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact  
on the Program/Erase/Write Status Register current cycle.  
The DREAD only perform read operation. Program/Erase /Read ID/Read status....operation do not support DREAD  
throughputs.  
(8) Sector Erase (SE)  
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". A Write Enable (WREN) in-  
struction must execute to set the Write Enable Latch (WEL) bit before sending the Sector Erase (SE). Any address  
of the sector (see table 1) is a valid address for Sector Erase (SE) instruction. The CS# must go high exactly at the  
byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not  
executed.  
Address bits [Am-A12] (Am is the most significant address) select the sector address.  
P/N: PM1576  
REV. 1.3, FEB. 10, 2012  
15  
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