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MX25L12845EMI-10G 参数 Datasheet PDF下载

MX25L12845EMI-10G图片预览
型号: MX25L12845EMI-10G
PDF下载: 下载PDF文件 查看货源
内容描述: 128M - BIT [ ×1 / ×2 / ×4 ] CMOS MXSMIO (串行多I / O )Flash存储器 [128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY]
分类和应用: 存储
文件页数/大小: 69 页 / 3278 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX25L12845E  
(13) Sector Erase (SE)  
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for  
any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit be-  
fore sending the Sector Erase (SE). Any address of the sector (see Table 6) is a valid address for Sector Erase (SE)  
instruction. The CS# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in);  
otherwise, the instruction will be rejected and not executed.  
Address bits [Am-A12] (Am is the most significant address) select the sector address.  
The sequence of issuing SE instruction is: CS# goes low → sending SE instruction code→ 3-byte address on SI  
→CS# goes high. (see Figure 29)  
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in  
Progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the  
tSE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the  
sector is protected by BP3~0 (WPSEL=0) or by individual lock (WPSEL=1), the array data will be protected (no  
change) and the WEL bit still be reset.  
(14) Block Erase (BE)  
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for  
64K-byte block erase operation. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL)  
bit before sending the Block Erase (BE). Any address of the block (see table 6) is a valid address for Block Erase (BE)  
instruction. The CS# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in);  
otherwise, the instruction will be rejected and not executed.  
The sequence of issuing BE instruction is: CS# goes low → sending BE instruction code → 3-byte address on SI  
→ CS# goes high. (see Figure 30)  
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in  
Progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the  
tBE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If  
the block is protected by BP3~0 (WPSEL=0) or by individual lock (WPSEL=1), the array data will be protected (no  
change) and the WEL bit still be reset.  
(15) Block Erase (BE32K)  
The Block Erase (BE32) instruction is for erasing the data of the chosen block to be "1". The instruction is used  
for 32K-byte block erase operation. A Write Enable (WREN) instruction must execute to set the Write Enable Latch  
(WEL) bit before sending the Block Erase (BE32). Any address of the block (see table 6) is a valid address for  
Block Erase (BE32) instruction. The CS# must go high exactly at the byte boundary (the latest eighth of address  
byte been latched-in); otherwise, the instruction will be rejected and not executed.  
The sequence of issuing BE32 instruction is: CS# goes low → sending BE32 instruction code → 3-byte address on  
SI → CS# goes high.  
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in  
Progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the  
tBE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If  
the block is protected by BP3~0 (WPSEL=0) or by individual lock (WPSEL=1), the array data will be protected (no  
change) and the WEL bit still be reset.  
P/N: PM1428  
REV. 0.06, MAR. 05, 2009  
22