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MX25L12845EMI-10G 参数 Datasheet PDF下载

MX25L12845EMI-10G图片预览
型号: MX25L12845EMI-10G
PDF下载: 下载PDF文件 查看货源
内容描述: 128M - BIT [ ×1 / ×2 / ×4 ] CMOS MXSMIO (串行多I / O )Flash存储器 [128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY]
分类和应用: 存储
文件页数/大小: 69 页 / 3278 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX25L12845E  
(6) Read Data Bytes (READ)  
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on  
the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address  
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can  
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been  
reached.  
The sequence of issuing READ instruction is: CS# goes low→ sending READ instruction code→3-byte address on  
SI →data out on SO→ to end READ operation can use CS# to high at any time during data out. (see Figure 17)  
(7) Read Data Bytes at Higher Speed (FAST_READ)  
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and  
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at  
any location. The address is automatically increased to the next higher address after each byte data is shifted out,  
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when  
the highest address has been reached.  
The sequence of issuing FAST_READ instruction is: CS# goes low→sending FAST_READ instruction code→3-byte  
address on SI→ 1-dummy byte (default) address on SI→data out on SO→ to end FAST_READ operation can use  
CS# to high at any time during data out. (see Figure 18)  
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any im-  
pact on the Program/Erase/Write Status Register current cycle.  
(8) 2 x I/O Read Mode (2READ)  
The 2READ instruction enables Double Transfer Rate of Serial Flash in read mode. The address is latched on rising  
edge of SCLK, and data of every two bits(interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maxi-  
mum frequency fT. The first address byte can be at any location. The address is automatically increased to the next  
higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ instruc-  
tion. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ instruc-  
tion, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.  
The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 24-bit address inter-  
leave on SIO1 & SIO0→ 4-bit dummy cycle on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to end 2READ  
operation can use CS# to high at any time during data out (see Figure 20 for 2 x I/O Read Mode Timing Waveform).  
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact  
on the Program/Erase/Write Status Register current cycle.  
P/N: PM1428  
REV. 0.06, MAR. 05, 2009  
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