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MX25L12845EMI-10G 参数 Datasheet PDF下载

MX25L12845EMI-10G图片预览
型号: MX25L12845EMI-10G
PDF下载: 下载PDF文件 查看货源
内容描述: 128M - BIT [ ×1 / ×2 / ×4 ] CMOS MXSMIO (串行多I / O )Flash存储器 [128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY]
分类和应用: 存储
文件页数/大小: 69 页 / 3278 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX25L12845E  
COMMAND DESCRIPTION  
Table 7. Command Sets  
WREN WRDI (write RDID (read  
RDSR  
WRSR FASTDTRD 2DTRD  
4DTRD  
(Dual I/O (Quad I/O  
DT Read) DT Read)  
COMMAND  
(byte)  
(write  
enable)  
06 (hex)  
disable) identification) (read status (write status (fast DT  
register)  
05 (hex)  
register)  
01 (hex)  
read)  
0D (hex)  
1st byte  
2nd byte  
04 (hex)  
9F (hex)  
BD (hex)  
ED (hex)  
ADD(2) & ADD(4) &  
Dummy(2) Dummy(4)  
Values  
ADD1  
ADD(1) &  
Dummy(1)  
Dummy(1)  
3rd byte  
4th byte  
Dummy(2) Dummy(4)  
sets the resets the  
(WEL) write (WEL) write  
outputs  
JEDEC  
to read out to write new n bytes read n bytes read n bytes read  
the values values to out (Double out (Double out (Double  
enable  
latch bit  
enable  
ID: 1-byte of the status the status  
Transfer  
Rate) until Rate) by  
CS# goes 2xI/O until 4xI/O until  
high CS# goes CS# goes  
Transfer  
Transfer  
Rate) by  
Action  
latch bit Manufacturer register  
ID & 2-byte  
register  
Device ID  
high  
high  
READ (read FAST READ 2READ (2 4READ (4 4PP (quad SE (sector BE (block  
BE 32K  
COMMAND  
(byte)  
data)  
(fast read x I/O read x I/O read  
page  
erase)  
erase 64KB) (block erase  
32KB)  
data)  
command) command) program)  
Note1  
1st byte  
2nd byte  
03 (hex)  
AD1  
(A23-A16)  
0B (hex)  
AD1  
BB (hex)  
EB (hex)  
ADD(4) &  
Dummy(4)  
38 (hex)  
20 (hex)  
AD1  
D8 (hex)  
AD1  
52 (hex)  
AD1  
ADD(2)  
AD1  
AD2  
ADD(2) &  
Dummy(2)  
3rd byte  
AD2  
Dummy(4)  
AD2  
AD3  
AD2  
AD3  
AD2  
AD3  
(A15-A8)  
AD3 (A7-  
A0)  
4th byte  
5th byte  
AD3  
Dummy  
n bytes read n bytes read n bytes read n bytes read quad input to erase the to erase the to erase the  
out until out until out by 2 x I/ out by 4 x I/ to program selected selected selected  
CS# goes CS# goes O until CS# O until CS# the selected sector 64KB block 32KB block  
Action  
high  
high  
goes high goes high  
page  
CE (chip PP (Page  
CP  
DP (Deep  
power  
down)  
RDP  
RES (read REMS (read REMS2 (read  
erase)  
program) (Continuously  
program  
(Release electronic electronic  
from deep  
power  
ID for 2x I/O  
mode)  
COMMAND  
(byte)  
ID)  
manufacturer  
& device ID)  
mode)  
down)  
60 or C7  
(hex)  
1st byte  
02 (hex)  
AD (hex)  
B9 (hex) AB (hex) AB (hex)  
90 (hex)  
EF (hex)  
2nd byte  
3rd byte  
4th byte  
AD1  
AD2  
AD3  
AD1  
AD2  
AD3  
x
x
x
x
x
x
x
ADD (Note 2) ADD (Note 2)  
output the output the  
to erase to program continously  
whole chip the selected  
page  
enters  
deep  
power  
down  
mode  
release  
to read  
program  
whole chip,  
the address is  
automatically  
increase  
from deep out 1-byte Manufacturer Manufacturer  
power Device ID ID & Device ID & Device  
Action  
down  
mode  
ID  
ID  
P/N: PM1428  
REV. 0.06, MAR. 05, 2009  
14