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MX25L12835F-M2I-10G 参数 Datasheet PDF下载

MX25L12835F-M2I-10G图片预览
型号: MX25L12835F-M2I-10G
PDF下载: 下载PDF文件 查看货源
内容描述: [16M闪存FLASH]
分类和应用: 闪存
文件页数/大小: 102 页 / 3804 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX25L12835F  
9-14. Quad Read Mode (QREAD)  
The QREAD instruction enable quad throughput of Serial Flash in read mode. The address is latched on rising edge  
of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum  
frequency fQ. The first address byte can be at any location. The address is automatically increased to the next high-  
er address after each byte data is shifted out, so the whole memory can be read out at a single QREAD instruction.  
The address counter rolls over to 0 when the highest address has been reached. Once writing QREAD instruction,  
the following data out will perform as 4-bit instead of previous 1-bit.  
The sequence of issuing QREAD instruction is: CS# goes low  
sending QREAD instruction → 3-byte address on  
SI  
8 dummy cycle (Default)  
data out interleave on SO3, SO2, SO1 & SO0  
to end QREAD operation can  
use CS# to high at any time during data out.  
While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any impact  
on the Program/Erase/Write Status Register current cycle.  
Figure 30. Quad Read Mode Sequence  
CS#  
29 30 31 32 33  
38 39 40 41 42  
0
1
2
3
4
5
6
7
8
9
SCLK  
Configurable  
dummy cycles  
Data  
Out 1  
Data Data  
Out 2 Out 3  
Command  
6B  
24 ADD Cycles  
A23A22  
A2 A1 A0  
D4 D0 D4 D0 D4  
SIO0  
SIO1  
SIO2  
SIO3  
High Impedance  
High Impedance  
High Impedance  
D5 D1 D5 D1 D5  
D6 D2 D6 D2 D6  
D7 D3 D7 D3 D7  
P/N: PM1795  
REV. 1.0, OCT. 23, 2012  
42  
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